<p>Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications [Corrigendum]</p>

Abstract

Figure 1 Schematic of the IGZO-based artificial bio synapses, i.e., IGZO TFT. (A) The typical structure of synapses, including the synaptic cleft: pre-and postsynaptic neuron parts. (B) An IGZO TFT device bottom gate structure and the proposed measurement of representative synaptic transmission behavior in IGZO TFT. (Voltage is applied to the bottom gate, and the drain current is the bionic neural signal). (C) SEM top image of IGZO TFTs with an IGZO channel between the source and the drain top electrodes (scale bar=300μm). (D) SEM image of IGZO TFTs layers cross section (scale bar = 100 nm).

Synaptic transistor with tunable synaptic behavior based on a thermo-denatured polar polymer material

“…5,6 Recently, a variety of electronic synaptic devices have been developed to achieve this goal, such as memristors, phase change memory, atomic switches and synaptic transistors. [7][8][9][10][11][12][13][14][15][16][17][18] Among them, although two-terminal synaptic devices have the advantages of a simple structure, high integration and compatibility with present complementary metal-oxide semiconductor (CMOS) technology, the learning and memory process in two-terminal synaptic devices are separated. Whereas, threeterminal thin film synaptic transistors have shown great potential in artificial synapses because of their low energy consumption, high scalability, similarity to biological neurons and precise regulation of channel conductance.…”