Synaptic transistor with tunable synaptic behavior based on a thermo-denatured polar polymer material

Yang, Qian; Huang, Jinsong; Chen, Qizhen; Chen, Cihai; Chen, Huipeng; Guo, Tailiang

doi:10.1039/d2tc00211f

Cited by 6 publications

(7 citation statements)

References 64 publications

(69 reference statements)

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“…Additionally, the decay time increased with the increasing spike number, spike width, spike rate, and spike intensity, which illustrates the transition of STM to LTM. The STM-LTM transition can be observed even under a low operating voltage of V d = −0.1 mV with 530-nm light illumination and increasing spike number (15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30), as shown in Figure S17b (Supporting Information). The result suggests that by using CSAMs as the charge-trapping layer, the STM-LTM transition behavior was emulated by manipulating the operating parameters.…”

Section: Synaptic Characteristics Of the Phototransistormentioning

confidence: 96%

“…In the era of information explosion, the separation between memory and computing systems in the traditional von including inorganic quantum dots composites, [19,23,24] photoactive polymers, [25][26][27][28] and organic biobased materials. [17] Inorganic quantum dots such as perovskite are blended with polymer and provide high light-absorption efficiency.…”

Section: Introductionmentioning

confidence: 99%

“…A series of charge‐trapping materials have been utilized to improve the performance of photosynaptic transistors, including inorganic quantum dots composites, [ 19,23,24 ] photoactive polymers, [ 25–28 ] and organic biobased materials. [ 17 ] Inorganic quantum dots such as perovskite are blended with polymer and provide high light‐absorption efficiency.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

High‐Performance Synaptic Phototransistor Using A Photoactive Self‐Assembled Layer toward Ultralow Energy Consumption

Wu,

Chang,

Chen

et al. 2023

Advanced Optical Materials

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Artificial synapses have gained great interest in the past few years because of their importance in deep learning and image recognition. To fulfill device miniaturization and reduce the energy consumption of device operation, a series of silane‐based photoactive/conjugated self‐assembled molecules (CSAMs), including isoindigo (IID), diketopyrrolopyrrole, and benzodithiophene, are used as the charge‐trapping layers in synaptic phototransistors. The devices comprising CSAM demonstrate excellent short‐term/long‐term memory behaviors and can emulate the paired‐pulse facilitation (PPF) function. Notably, the IID‐based device shows the highest photoresponse, and this performance is highly related to the charge transfer efficiency and the photophysics lifetimes derived from the time‐resolved photoluminescence and the transient absorption characterizations. Therefore, IID produces the highest PPF ratios of 139% to blue light and 144% to green light. In addition, the energy consumption of 0.029 fJ at an operating voltage of −0.1 mV is achieved, which is the lowest value in synaptic phototransistors so far. Notably, neural networks of supervised and unsupervised learning algorithms are demonstrated in the device studied to process a pattern recognition system. Collectively, using conjugated self‐assembled materials as a charge‐trapping layer is a promising way for synaptic phototransistor applications to reduce energy consumption and fulfill the device miniaturization.

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Section: Synaptic Characteristics Of the Phototransistormentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

High‐Performance Synaptic Phototransistor Using A Photoactive Self‐Assembled Layer toward Ultralow Energy Consumption

Wu,

Chang,

Chen

et al. 2023

Advanced Optical Materials

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“…38 The inset scatter plot revealed a 780 mA V À1 coefficient from À1 V to À2 V, indicating that the device postsynaptic current was sensitive to the change in temporal gate stimuli. As important synaptic behavior in STP, 39 the FOECT paired-pulse facilitation was investigated. As illustrated in Fig.…”

Section: Synaptic Performancesmentioning

confidence: 99%

Boron nitride-mediated semiconductor nanonetwork for an ultralow-power fibrous synaptic transistor and C-reactive protein sensing

Shu

Qing

et al. 2023

J. Mater. Chem. C

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“…[16][17][18][19][20][21] Recently, keen interest has been further focused on memory transistors, which can deliver hysteresis signals by adjusting the voltage pulses of three electrodes, due to excellent scalability to 2D and 3D array systems. [22][23][24][25] The hysteric current signals in neuromorphic memory transistors could be achieved by introducing charge-trapping layers including high-k materials. [26][27][28][29][30][31] In particular, organic memory transistors (OMTRs) have been a rising candidate for artificial synapses because of their strong potential for flexible and wearable devices, which is of the utmost importance in actual neuromorphic device applications.…”

Section: Introductionmentioning

confidence: 99%

Near‐Infrared‐Sensing Flexible Organic Synaptic Transistors with Water‐Processable Charge‐Trapping Polymers for Potential Neuromorphic Computing/Skin Applications

Kim,

Lee,

Kim

et al. 2024

Advanced Intelligent Systems

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Neuromorphic devices, which can mimic the human body's neural system, are rising as an essential technology for artificial intelligence. Here, two types of organic synaptic transistors (OSTRs), OSTR‐A and OSTR‐B, are fabricated on either glass or polymer film using water‐processable charge‐trapping gate‐insulating layers that are prepared by reacting ethylenediamine (EDA) and poly(2‐acrylamido‐2‐methyl‐1‐propanesulfonic acid) (PAMPSA). OSTR‐A is designed to function as a basic artificial synapse by gate pulse stimulation only, while OSTR‐B has additional near‐infrared (NIR)‐absorbing conjugated polymer layers for further sensing of NIR light upon gate voltage stimulations. The PAMPSA:EDA films are found to contain permanent charge bridges (ion pairs of –SO3− +NH3‐) that play a charge‐trapping role in OSTRs. Both devices with the PAMPSA:EDA layers exhibit clear postsynaptic current (PSC) signals upon gate voltage pulses, leading to long‐term potentiation/depression characteristics. The flexible OSTR‐B devices can sense the NIR light (905 nm) upon gate pulse stimulation and their PSC signals are well maintained even after bending (>5000 times). Artificial neural network simulations disclose that the flexible OSTR‐B devices can stably perform synaptic operations under the NIR light with high accuracy (>90%) even after repeated bending (5000 times), indicative of potential use in artificial neuromorphic skin applications.

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Synaptic transistor with tunable synaptic behavior based on a thermo-denatured polar polymer material

Abstract: Artificial synaptic transistors have shown great potential in artificial intelligence due to its low energy consumption, high scalability, similarity with biological neurons and precise regulation of the channel conductance. A...

Cited by 6 publications

References 64 publications

High‐Performance Synaptic Phototransistor Using A Photoactive Self‐Assembled Layer toward Ultralow Energy Consumption

High‐Performance Synaptic Phototransistor Using A Photoactive Self‐Assembled Layer toward Ultralow Energy Consumption

Boron nitride-mediated semiconductor nanonetwork for an ultralow-power fibrous synaptic transistor and C-reactive protein sensing

Near‐Infrared‐Sensing Flexible Organic Synaptic Transistors with Water‐Processable Charge‐Trapping Polymers for Potential Neuromorphic Computing/Skin Applications

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