LSE investigation of the thermal effect on band gap energy and thermodynamic parameters of BInGaAs/GaAs Single Quantum Well

Hidouri, Tarek; Saidi, F.; Maaref, Hichem; Rodriguez, Philippe; Auvray, Laurent

doi:10.1016/j.optmat.2016.10.010

Cited by 26 publications

(7 citation statements)

References 22 publications

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“…As for the QW structure, the compositional and structural inhomogeneity may cause the localized potential fluctuations in the band structure of layered RP perovskite and free carriers (excitons) that in movement will be perturbed. Those are the origin of trap levels which might spatially trap (localize) the free carriers (excitons) . The degree of localization effect can be determined by fitting the temperature‐dependent emission energy curve (Figure D) with the band‐tail model …”

Section: Resultsmentioning

confidence: 99%

Layered Ruddlesden–Popper Efficient Perovskite Solar Cells with Controlled Quantum and Dielectric Confinement Introduced via Doping

Wang

Zhang

et al. 2019

Adv Funct Materials

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Layered Ruddlesden-Popper (RP) hybrid perovskite semiconductors have recently emerged as promising materials for photovoltaics application. However, the strong quantum and dielectric confinement of RP perovskite compounds increases their optical bandgap and binding energy of exciton, which limit their application in solar cells. Herein, the doping of RP-based (BA) 2 (MA) 3 Pb 4 I 13 perovskite materials by means of Li + is reported for the first time, which can significantly help to reduce dielectric confinement and thus the exciton-binding energy via reducing the dielectric constant difference between organic spacer cation and inorganic framework. Furthermore, the Li + doping boosts the carrier mobility, reduces the trap density states, and thus allows to achieve power conversion efficiency of ≈15% via Li + -(BA) 2 (MA) 3 Pb 4 I 13 -based perovskite solar cell, which is the highest efficiency for layered perovskites (n = 4) so far. This work highlights the promising ionic doping engineering for further improvement of the layered perovskite materials.

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Section: Resultsmentioning

confidence: 99%

Layered Ruddlesden–Popper Efficient Perovskite Solar Cells with Controlled Quantum and Dielectric Confinement Introduced via Doping

Wang

Zhang

et al. 2019

Adv Funct Materials

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“…In order to understand the anomalous temperature dependence of PL, the PL peak position has been investigated using the LSE model developed by Li et al [ 25 , 26 ]. Indeed, this quantitative model provides a satisfactory explanation for the anomalous spectral features of the localized-state luminescence previously observed in several III–V materials such as boron-based B(In)GaAs/GaAs [ 27 , 28 ] alloys and InGaAs/GaAs MQWs [ 29 , 30 ]. The model assumed that the localized state has a Gaussian-type energy distribution for density of states given by: …”

Section: Theoretical Approachmentioning

confidence: 54%

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

et al. 2017

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This paper reports on experimental and theoretical investigations of atypical temperature-dependent photoluminescence properties of multi-stacked InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The InAs/InGaAs/GaAs QD heterostructure was grown by solid-source molecular beam epitaxy (SS-MBE) and investigated via photoluminescence (PL), spectroscopic ellipsometry (SE), and picosecond time-resolved photoluminescence. Distinctive double-emission peaks are observed in the PL spectra of the sample. From the excitation power-dependent and temperature-dependent PL measurements, these emission peaks are associated with the ground-state transition from InAs QDs with two different size populations. Luminescence measurements were carried out as function of temperature in the range of 10–300 K by the PL technique. The low temperature PL has shown an abnormal emission which appeared at the low energy side and is attributed to the recombination through the deep levels. The PL peak energy presents an anomalous behavior as a result of the competition process between localized and delocalized carriers. We propose the localized-state ensemble model to explain the usual photoluminescence behaviors. The quantitative study shows that the quantum well continuum states act as a transit channel for the redistribution of thermally activated carriers. We have determined the localization depth and its effect on the application of the investigated heterostructure for photovoltaic cells. The model gives an overview to a possible amelioration of the InAs/InGaAs/GaAs QDs SCs properties based on the theoretical calculations.

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“…The luminescence features can be described by either the classical or the modified Passler model due to the thermal redistribution coefficient (later designed as R (T)). More information on the modeling concept and the related parameters can be found through [24,25].…”

Section: Modelling and Quantitative Interpretation Of CLmentioning

confidence: 99%

Point defect localization and cathodoluminescence emission in undoped ε-Ga₂O₃

Hidouri¹,

Parisini²,

Dadgostar³

et al. 2022

J. Phys. D: Appl. Phys.

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In this study, experimental and theoretical investigations have been performed on nominally undoped -Ga2O3 films deposited on (0001)-Al2O3 substrates by Metal-Organic Vapor Phase Epitaxy (MOVPE) using different O and Ga precursor ratios. Hydrogen and Helium were used as carrier gas. Low-temperature Cathodoluminescence (CL) broad emissions extending over the range 1.5 - 3.4 eV were deconvoluted in five peaks, whose position, integrated intensity, and full width at half maximum (FWHM)) were investigated in the temperatures range 80 -300K. A non-monotonic behavior of the extracted CL peaks is observed, which is attributed to localization phenomena connected with families of point defects. The behavior of two main luminescence emissions with temperature has been simulated using the Localized State Ensemble (LSE) model. The derived parameters agree with the experimental observations and provide a new interpretation of micro-and macroscale disorder inside -Ga2O3 and related potential fluctuations.

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LSE investigation of the thermal effect on band gap energy and thermodynamic parameters of BInGaAs/GaAs Single Quantum Well

Cited by 26 publications

References 22 publications

Layered Ruddlesden–Popper Efficient Perovskite Solar Cells with Controlled Quantum and Dielectric Confinement Introduced via Doping

Layered Ruddlesden–Popper Efficient Perovskite Solar Cells with Controlled Quantum and Dielectric Confinement Introduced via Doping

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

Point defect localization and cathodoluminescence emission in undoped ε-Ga₂O₃

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LSE investigation of the thermal effect on band gap energy and thermodynamic parameters of BInGaAs/GaAs Single Quantum Well

Cited by 26 publications

References 22 publications

Layered Ruddlesden–Popper Efficient Perovskite Solar Cells with Controlled Quantum and Dielectric Confinement Introduced via Doping

Layered Ruddlesden–Popper Efficient Perovskite Solar Cells with Controlled Quantum and Dielectric Confinement Introduced via Doping

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

Point defect localization and cathodoluminescence emission in undoped ε-Ga2O3

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Point defect localization and cathodoluminescence emission in undoped ε-Ga₂O₃