Electron density and Hall mobility data were simultaneously analyzed in the frame of the relaxation time approximation in order to identify the main scattering mechanisms that limit the carrier mobility in β-Ga 2 O 3 single crystals. The Hall factor correction was self-consistently included in the fitting procedure. The analysis indicates that low-energy optical phonons provide the main scattering mechanism, via lattice deformation. In this regard, a deformation potential of about 4×10 9 eV cm −1 was estimated. Furthermore, it is shown that the Hall coefficient and mobility can be measured by the usual experimental geometry, and the standard transport theory can be applied when off-diagonal elements of the resistivity tensor at zero magnetic field are negligible with respect to the diagonal ones. This directly follows from the analysis of the magneto-resistive tensor of a semiconductor with monoclinic structure. Such a requirement is satisfied under the hypothesis of nearly spherical energy surfaces, as has been reported to occur at the Γ minimum of the conduction band of β-Ga 2 O 3 .
The temperature dependence of the Hall hole density and the Hall mobility data of heavy doped p-type 4H-SiC(Al) materials obtained by Al+ ion implantation have been analysed in the frame of the charge neutrality condition and the relaxation time approximation. Samples with implanted Al concentrations in the range 1019–1020 cm−3 and 1950 °C/5 min conventional annealing have been taken into account. The reliability of the calculation has been critically discussed by focusing the attention on both the validity limits of the models for the impurity scattering mechanisms and the adopted Hall factor. By introducing empirical mass anisotropy factors, reasons were given in favour of a generalized use of the unique experimental evaluation of the Hall factor reported by the literature for p-type 4H-SiC, assessed for an Al acceptor density in the range of 1.8 × 1015 cm−3–2 × 1018 cm−3. The simultaneous fits of the Hall hole density and mobility data indicate an electrical activation of the Al impurities of the order or higher than 70% and a compensation of about 10% of the Al acceptors.
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