Abstract:In this study, experimental and theoretical investigations have been performed on nominally undoped -Ga2O3 films deposited on (0001)-Al2O3 substrates by Metal-Organic Vapor Phase Epitaxy (MOVPE) using different O and Ga precursor ratios. Hydrogen and Helium were used as carrier gas. Low-temperature Cathodoluminescence (CL) broad emissions extending over the range 1.5 - 3.4 eV were deconvoluted in five peaks, whose position, integrated intensity, and full width at half maximum (FWHM)) were investigated in the t… Show more
Halide vapor phase epitaxial (HVPE) Ga2O3 films were grown on c-plane sapphire and diamond substrates at temperatures up to 550 °C without the use of a barrier dielectric layer to protect the diamond surface. Corundum phase α-Ga2O3 was grown on the sapphire substrates, whereas the growth on diamond resulted in regions of nanocrystalline β-Ga2O3 (nc-β-Ga2O3) when oxygen was present in the HVPE reactor only during film growth. X-ray diffraction confirmed the growth of α-Ga2O3 on sapphire but failed to detect any β-Ga2O3 reflections from the films grown on diamond. These films were further characterized via Raman spectroscopy, which revealed the β-Ga2O3 phase of these films. Transmission electron microscopy demonstrated the nanocrystalline character of these films. From cathodoluminescence spectra, three emission bands, UVL′, UVL, and BL, were observed for both the α-Ga2O3/sapphire and nc-Ga2O3/diamond, and these bands were centered at approximately 3.7, 3.2, and 2.7 eV.
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