Lpe growth of high purity InP and N- and P-In0.53Ga0.47As

Kuphal, E.; Fritzsche, D.

doi:10.1007/bf02676801

Cited by 35 publications

(5 citation statements)

References 22 publications

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“…E,= 1.35 eV and m n = 0.078mo (Walukiewicz et a1 1980). The agreement with the experimental data of Anderson et a1 (1989( , Astles et a1 (1973, Kuphal and Fritzsche (1983), Roder et a1 (1970), Rosztoczy et a1 (1 971) and Brown (1974) is very good and is in accordance with the empirical curve of Anderson et a1 (1985). At 300 K, scattering due to phonons should also be taken into account.…”

Section: N=k3(e~)/37r2+(kgt)2/18[d2k3(e)/de2]~=~fsupporting

confidence: 87%

Electron mobility in heavily doped indium phosphide due to scattering by potential fluctuations

Yanchev¹,

Evtimova²

1987

Semicond. Sci. Technol.

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The electron mobility at 77 K and 300 K of heavily doped InP is calculated by using the relaxation time given by Yussouff and Zittartz for scattering by potential fluctuations. A good agreement with available experimental data is obtained taking into account Coulomb correlations in the impurity distribution, the non-parabolicity of the conduction band and many-particle corrections to the Fermi energy.

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Section: N=k3(e~)/37r2+(kgt)2/18[d2k3(e)/de2]~=~fsupporting

confidence: 87%

Electron mobility in heavily doped indium phosphide due to scattering by potential fluctuations

Yanchev¹,

Evtimova²

1987

Semicond. Sci. Technol.

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“…2. 29 ing (RS) has been applied already quite early to gas phase diagnostics in order to determine temperatures by using rotational transitions in the carrier gas molecules (Sect. 430 470 Wavelength (nm) 19.…”

Section: Gas Phase Diagnostics: Reaction Kineticsmentioning

confidence: 99%

“…29. Raman spectra of 1 ML Sb on InP(llO) recorded for different excitation photon energies as indicated in the figure.…”

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confidence: 99%

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Optical Characterization of Epitaxial Semiconductor Layers

Bauer¹,

Richter²

1996

120

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© Springer-Verlag Berlin Heidelberg 1996 Softcover reprint of the hardcover 1st edition 1996The use of general descriptive names, registered names, trademarks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. Production: PRODUserv Springer Produktions-Gesellschaft, Berlin Cover: Lewis + Leins GmbH; Berlin; Typesetting: Camera-ready by authors SPIN: 10062779 54/3020 -5 432 I 0 -Printed on acid-free paper DEDICATED TO PETER GROSSE VIIIPreface ronment to the sample. Other areas (photoluminescence, modulation spectroscopy, time resolved spectroscopy) were excluded because excellent reviews already exist and, in addition, their inclusion would have increased this book considerably.In the course of writing and editing we have experienced numerous useful advice and helpful discussions from many colleagues. We would like to specifically mention M.

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“…Hence, low electrical resistivity is required but this implies reduced Seebeck coefficient. Since InGaAs offers high mobility 11 this tradeoff is relaxed compared to low mobility materials.…”

mentioning

confidence: 99%

Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors

Dehe

Hartnagel

Pavlidis

et al. 1996

Applied Physics Letters

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We present a concept for the realization of InGaAs/InP micromachined thermoelectric sensors. The advantages of InGaAs lattice matched to InP combine perfectly for this application. The high selectivity of wet chemical etching of InP against InGaAs is ideally suited for surface bulk micromachining. Thermoelectric InGaAs sensors profit from the high thermal resistivity combined with high electrical conductivity and Seebeck effect. Thanks to the material parameters a responsivity of 257 V/W and relative detectivity of 6.4×108 cm Hz−1/2/W are expected for infrared sensors.

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Lpe growth of high purity InP and N- and P-In0.53Ga0.47As

Cited by 35 publications

References 22 publications

Electron mobility in heavily doped indium phosphide due to scattering by potential fluctuations

Electron mobility in heavily doped indium phosphide due to scattering by potential fluctuations

Optical Characterization of Epitaxial Semiconductor Layers

Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors

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