Electron mobility in heavily doped indium phosphide due to scattering by potential fluctuations

Yanchev, Ivan; Evtimova, S.

doi:10.1088/0268-1242/2/8/011

Cited by 4 publications

(2 citation statements)

References 27 publications

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“…Consequently any attempt to obtain a quantitative fit between the experimental results discussed in the next section and theory simply by assuming compensation and allowing the ratio of nlNi to decrease from unity should be treated with extreme caution. For example Yanchava and Evtimova [25] assumed a smoothed random potential created by the fluctuations of a large number of impurities to analyse their data for InP rather than increasing the compensation.…”

Section: Theorymentioning

confidence: 99%

Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE

Parker¹,

Williams²,

Droopad³

et al. 1989

Semicond. Sci. Technol.

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The MBE growth and doping of heteroepitaxial layers of lnSb on GaAs (100) are investigated. The layers are assessed by low-field Hall and magnetoresistivity measurements and high-field Shubnikov-de Haas studies together with infrared transmission, and TEM. The mechanism for silicon incorporation is investigated as a function of growth temperature. At low growth temperatures =340 "C) silicon acts only as a donor and can produce electron concentrations up to 3 x 10l8 cm-3 with 77 K mobilities indentical to those found with bulk material. Although higher concentrations than 3 X 10l8 cm-3 can be achieved; auto-compensation appears to occur in those samples. The 77 K mobilities achieved for less heavily doped samples ( > 4 0 000 cm2 V-' S" for n = 1.2 x lo1' cm-3 for samples grown at 340 OC) are the highest lowtemperature mobilities yet reported for n-type lnSb films of = 1 p m thickness grown on GaAs. However, higher growth temperatures (-420 "C) combined with constant silicon flux are found to simultaneously decrease electron concentration and mobility measured at 77 K although the structural quality as assessed by TEM remains unchanged. Analysis of the observed behaviour in terms of the Brooks-Herring model of ionised impurity scattering, modified for non-parabolicity, suggests that silicon is acting amphoterically with compensation ratios (N,/N,) reaching 0.5 at the higher temperatures. The effect of the interface between GaAs and InSb (lattice mismatch = 14%) on the electrical properties is studied by introducing doping slabs of thickness =l300 8, at various distances (d) between the interface (d=O pm) and the surface (d-1.5 pm) of the epilayer. The mobility is degraded by more than a factor of two when the slab is located at the interface but deviations from the bulk mobility are small when the sample is grown at low temperatures and the slab is located more than =0.3 p m from the interface. Pronounced two-dimensional Shubnikov-de Haas effects are observed with the doping slabs. A series of peaks not periodic in reciprocal field (1/B) are found at low fields with B parallel to the slabs and are interpreted as arising from the diamagnetic depopulation of the large number of subbands occupied as a result of the considerable thickness of the slabs. Be doping at 2 x IO'' cm-3 was demonstrated and, as with silicon, the bulk mobility corresponding to this hole concentration was achieved.

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Section: Theorymentioning

confidence: 99%

Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE

Parker¹,

Williams²,

Droopad³

et al. 1989

Semicond. Sci. Technol.

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“…This additional screening may be described by the Thomas-Fermi screening length for ionized impurity screening as shown in equation (A.12). Combining the impurity and carrier screening together, a total effective screening length shown in equation (A.13)[34,53,54] is computed. With these parameters, the ionized impurity mobility can be found by using equations (A.14)-(A 18).…”

mentioning

confidence: 99%

Semiconductors for high selectivity thermal emitters

Doiron

Naik

2018

J. Opt.

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Selective emitters limit thermal radiation to a narrow spectral band enabling applications including energy conversion and sensing. While applications demand high spectral selectivity, the materials used for selective emitters limit the ultimate selectivity. At high temperatures (>600 K), the optical properties of materials degrade, resulting in poor spectral selectivity, and thus leaving an open question—what material platform makes a good selective thermal emitter? Here, we show that doped semiconductors make a good choice by predicting their temperature dependent optical constants in a wide doping range. We build semi-empirical models to predict the temperature dependences of microscopic processes in GaAs and Si, a polar and a non-polar semiconductor respectively, and demonstrate that semiconductors with small and tunable optical losses enable very high spectral selectivity in thermal emitters. Our predictions agree reasonably well with more complex and accurate methods such as variational and second order perturbation theories, and serve as a guide in the discovery and development of materials for high temperature nanophotonics.

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Hall Effect and Conductivity Measurements in Semiconductor Crystals and Thin Films

Ellmer

2012

Characterization of Materials

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The principle of the Hall effect and its application to the characterization of semiconductors are described. The physical origin of the Hall effect, discovered by Edwin H. Hall in 1879, is the Lorentz force acting on the charge carriers in a solid. The Hall voltage, which is generated perpendicular to the current flow in the sample, is proportional to the carrier mobility in the sample. Its sign depends on the type of the (majority) charge carrier (electrons or holes) and can be used to determine if a semiconductor is n‐ or p‐type. From the measured Hall voltage, the carrier concentration n of the Hall sample can be determined. In combination with a conductivity (σ) measurement, the Hall mobility μ H of the sample can be calculated according to μ = σ/( qn ). Though in principle simple, the preparation of the Hall measurement samples and the interpretation of the measurements needs some care and the appropriate theory for the charge carrier transport in semiconductors. The normal Hall effect can be explained by a semiclassical theory, while the quantum Hall effect, discovered by von Klitzing in 1980, is a true quantum effect, which occurs only at very high fields at low temperatures in two‐dimensional electron gases. The so‐called von Klitzing constant R K = h / e 2 = 25812.807557(18) Ω, which is extracted from a quantum Hall measurement, can be used for the definition of the international standard for resistance. Today, the (normal) Hall effect finds applications for the characterization of semiconductors and mainly for Hall sensors (produced in numbers of billions/year) for the measurement of magnetic fields, for noncontact (proximity) switches, speed detectors, position, and current sensors.

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Electron mobility in heavily doped indium phosphide due to scattering by potential fluctuations

Cited by 4 publications

References 27 publications

Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE

Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE

Semiconductors for high selectivity thermal emitters

Hall Effect and Conductivity Measurements in Semiconductor Crystals and Thin Films

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