Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors

Dehe, A.; Hartnagel, H.L.; Pavlidis, D.; Hong, Kimin; Kuphal, E.

doi:10.1063/1.116832

Cited by 6 publications

(4 citation statements)

References 7 publications

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“…Such assumptions, however, require the verification that the causal and linear relationship between Δ T and Δ V is maintained over a long period of bj‐PG's activity time. Such verification is missing in the current literature . Therefore, this work studies the interaction between CB‐IR radiation and a bj‐PG over time.…”

Section: Introductionmentioning

confidence: 94%

“…Visible light, IR, and microwave radiation transfer heat radiatively. Due to the association between radiation and heat, bj‐PGs are largely used to exploit the SE in thermopiles useful for IR radiation detection, power measurements, thermal imaging, temperature sensors, and energy‐harvesting devices . In these applications, a large variety of sources, from common broadband sources to lasers, are employed to activate the bj‐PGs .…”

Section: Introductionmentioning

confidence: 99%

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Infrared power generation in an insulated compartment

et al. 2013

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The mechanism that activates a bi-junction power generator under the effects of heat is the Seebeck effect, that is, the production of voltage difference DV(t) is directly proportional to the temperature difference DT(t) between the ''hot'' and ''cold'' junctions of the device. This phenomenon is well established and is known as thermoelectric power generation. Here, it is shown that, instead, the causal and linear relationship between DV(t) and DT(t) is lost when continuous broadband infrared (CB-IR) radiation illuminates a bi-junction power generator in an insulated compartment. The observed phenomenon is IR power generation. Heat transfer calculations fail in explaining the experimental trends. The interaction between CB-IR radiation and the charge carriers in the bi-junction power generator might play a role in the DV(t) production, depending upon the geometry of the experimental setup. The longitudinal propagation of collective oscillations, for example, polaritons, in the plates protecting the ''hot'' and ''cold'' junctions of the bi-junction power generator could explain the DV(t) production and the characteristic time constants. The findings should be considered in the design, fabrication, and improvement of thermopiles, power meters, and IR energy-harvesting devices.

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Section: Introductionmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Infrared power generation in an insulated compartment

et al. 2013

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“…This etchant has a high selectivity between InP and InGaAs. 30) We added acetic acid to decrease the viscosity of the solution while keeping the etching rate. 31) The lifted-off blocks were rinsed in ethanol and DI water, and stored in ethylene glycol.…”

Section: Fsa Using the Rtd Device Blocks And Its Characterizationmentioning

confidence: 99%

Fluidic Self-Assembly Using Molten Ga Bumps and Its Application to Resonant Tunneling Diodes

Nakano¹,

Shibata²,

Morita³

et al. 2013

Jpn. J. Appl. Phys.

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Fluidic self-assembly (FSA) using molten metal bumps is one of the most promising heterogeneous integration (HI) technologies, which enable us to integrate devices made of various materials on various substrates. We can fabricate the metal bumps using Ga having diameters of 24, 18, 12, and 8 µm with good yield. Using Ga has significant advantages; especially, it includes no toxic metals. These bumps were used for the FSA process of the metal dummy blocks having a diameter of 18 µm, and a good yield of 84% was obtained all over the substrate of about 1×1 cm2. Finally, we applied this method to the resonant tunneling diode (RTD) to verify good electrical, mechanical, and thermal contacts. The RTD device blocks having a diameter of 24 µm have been successfully assembled using the molten Ga bumps. This method is promising for high-performance RTD integration.

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“…In their fabrication anisotropic wet-etching of InP is used to form specific device features, including ridge-groove patterns for diffraction gratings [3,4], V-groove patterns for quantum wire structures [5,6], and alignment grooves for monolithic integration [7,8]. It is also applied to release suspended semiconductor membranes [9,10], and to form emitter-or collector-size-reduced self-aligned hetero-junction bipolar transistors [11,12].…”

Section: Introductionmentioning

confidence: 99%

Wet-etch bulk micromachining of (100) InP substrates

Eliáš

Kostič

Šoltýs

et al. 2004

J. Micromech. Microeng.

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The study focused on object formation in (100) InP by etching in 3HCl:1H3PO4 through convex and concave square mask patterns of varied orientation and size. Their upper right-hand-side corners were aligned to , and to 15°, 30° and 45° off to . Some -oriented convex squares had - and -oriented corners compensated with rectangular extensions. The concave patterns led to objects with ordinary slow-etching or etch-stop facets along sides in line within and with ordinary and re-entrant facets along sides in line within . The convex patterns (, 15° and 30°) led to objects initially confined by fast-etching facets at corners and slow-etching or etch-stop facets at sides (ordinary between and , and re-entrant between and ). The side facets were eliminated by the progress of the corner ones. They (-oriented patterns) proceeded at rates almost independent of size before the eradication of the side facets, after which they proceeded faster. The -oriented convex patterns led to objects confined only by fast-etching facets. The objects developed at rates that considerably depended on pattern size and etching time. Objects under small patterns developed faster compared to those under large ones. The -oriented corner-compensated patterns led to pyramidal objects confined by facets related to (110), , (101) and .

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Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors

Cited by 6 publications

References 7 publications

Infrared power generation in an insulated compartment

Infrared power generation in an insulated compartment

Fluidic Self-Assembly Using Molten Ga Bumps and Its Application to Resonant Tunneling Diodes

Wet-etch bulk micromachining of (100) InP substrates

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