Infrared power generation in an insulated compartment

Abstract

The mechanism that activates a bi-junction power generator under the effects of heat is the Seebeck effect, that is, the production of voltage difference DV(t) is directly proportional to the temperature difference DT(t) between the ''hot'' and ''cold'' junctions of the device. This phenomenon is well established and is known as thermoelectric power generation. Here, it is shown that, instead, the causal and linear relationship between DV(t) and DT(t) is lost when continuous broadband infrared (CB-IR) radiation illuminates a bi-junction power generator in an insulated compartment. The observed phenomenon is IR power generation. Heat transfer calculations fail in explaining the experimental trends. The interaction between CB-IR radiation and the charge carriers in the bi-junction power generator might play a role in the DV(t) production, depending upon the geometry of the experimental setup. The longitudinal propagation of collective oscillations, for example, polaritons, in the plates protecting the ''hot'' and ''cold'' junctions of the bi-junction power generator could explain the DV(t) production and the characteristic time constants. The findings should be considered in the design, fabrication, and improvement of thermopiles, power meters, and IR energy-harvesting devices.

Infrared and thermoelectric power generation in thin atomic layer deposited Nb-doped TiO2 films

“…The commercially available bulk TE power generator device referred to in this research is a 07111-9L31-04B device by Custom Thermoelectrics Inc. 11,31 in which the active TE element is doped Bi 2 Te 3 -based alloy.…”

“…As in previously published reports on IR and TE power generation, 11,31 the voltage DVðtÞ and the temperature difference DTðtÞ were measured using Keithley 2000 multimeters, sensitive to direct current voltages from 1 to 1 kV and to temperatures from À270 to 1000 C. The LABVIEW 2012 software was used to record the measurements as a function of time. 11,31 In order to avoid external disturbances from exciting the NPG device, the laboratory was kept at a constant temperature of 20 C, with device, IR radiation and heat sources housed in a dark, N 2 purged isolated sample compartment.…”

“…11,31 In order to avoid external disturbances from exciting the NPG device, the laboratory was kept at a constant temperature of 20 C, with device, IR radiation and heat sources housed in a dark, N 2 purged isolated sample compartment. 11,31 The data were collected for 20 min after starting the illumination with the IR radiation or the heat transfer from the hot plate to the NPG device to allow sufficient time for DVðtÞ and DTðtÞ to approach equilibrium.…”

“…According to recent studies, DVðtÞ and DTðtÞ are not linearly related when heat is transferred radiatively from the IR radiation to a bulk TE device. 11 More specifically, DVðtÞ raises at least one order of magnitude faster than DTðtÞ. In addition, in certain circumstances DVðtÞ decays while DTðtÞ does not.…”

“…These phenomena in which the Seebeck effect is violated is IR power generation. [11][12][13] The goal of the research presented here is to determine whether the violations summarized above apply in a nanometric power generator (NPG) device in which the active element is a thin TE film deposited by atomic layer deposition (ALD). If the violation of the Seebeck effect applies, then voltage production is not limited by the Seebeck coefficient.…”