Optical Characterization of Epitaxial Semiconductor Layers

Bauer, G.; Richter, Wolfgang

doi:10.1007/978-3-642-79678-4

Cited by 120 publications

References 36 publications

(124 reference statements)

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Infrared reflectance studies of GaN epitaxial films on sapphire substrate

Feng

Hou

Chua

et al. 1999

Surf. Interface Anal.

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Infrared reflectivity measurements were performed on undoped and Si‐doped GaN films grown on sapphire. After analysing the substrate reflectance accurately, a good fit to the measured reflectance has been achieved. By comparison of the measured and calculated spectra, it becomes possible to identify GaN phonons from the overlapped complicated substrate bands, and also to determine the carrier concentration even for GaN on sapphire with low and medium doping levels. In some samples, an interface layer has been demonstrated to be formed between film and substrate, which manifests itself as a damping behaviour of the interference fringes in the spectra. Detailed analysis suggests that this interface layer, with a thickness of ∼0.14 µm estimated from a two‐layer model simulation, may be due to the high density of defects caused by stress relaxation. Copyright © 1999 John Wiley & Sons, Ltd.

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Infrared reflectance studies of GaN epitaxial films on sapphire substrate

Feng

Hou

Chua

et al. 1999

Surf. Interface Anal.

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Raman Scattering from Surface Phonons

Hinrichs

1998

phys. stat. sol. (a)

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Optical Properties and Charge Transport

Ulbrich

2013

Materials Science and Technology

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The sections in this article are Introduction Optical Properties of Bulk Crystals Band Structure and Electron‐Hole Pair Excitations Dielectric Polarization and Response Function Correlated Electron‐Hole Pairs: Excitons Single‐Particle Versus Pair Excitations Exciton‐Photon Coupling: Polaritons Interband Absorption Spectra Direct versus Indirect Transitions Radiative Recombination Rate Angular Dependence of Interband Transitions Fundamental Gap Spectra at Low Excitation Exciton Screening Systems with Restricted Dimensionality Electronic Confinement Quantum Wells, ‐Wires and ‐Dots Optics of Quantum Confined Systems Microcavities and Photonic Band Gaps Charge Transport and Scattering Processes Momentum and Energy Relaxation of Carriers Phonon Scattering Carrier‐Carrier Scattering Coherent Phenomena Spin Effects Quantum Transport Nonlinear Optics and High Field Transport Nonlinear Dielectric Response Carrier Distributions Far from Equilibrium Carrier Dynamics on Ultrashort Time Scales Conclusion

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Optical Characterization of Epitaxial Semiconductor Layers

Cited by 120 publications

References 36 publications

Infrared reflectance studies of GaN epitaxial films on sapphire substrate

Infrared reflectance studies of GaN epitaxial films on sapphire substrate

Raman Scattering from Surface Phonons

Optical Properties and Charge Transport

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