LPCVD of SiC layers in a hot-wall reactor using TMS precursor

Abstract

Sic polycrystalline layers were grown by LPCVD in a hot wall reactor using tetramethylsilane (TMS) diluted in hydrogen as precursor. The morphology and the structure of the films were analyzed in terms of deposition temperature, total pressure in the reactor and TMS flow rate. The layer's have been characterized using various techniques: SEMI X-ray diffraction and TEM (HREM and EELS).

Reduced-Pressure Chemical Vapor Synthesis of Nanocrystalline Silicon Carbide Powders

“…The energy required for the decomposition of volatile silicon compounds in gas phase reactions forming ultrafine SiC particles can be provided by laser radiation, [14][15][16][17][18][19][20][21][22][23][24][25] plasmas, [26][27][28][29][30] or thermally. [31][32][33][34][35] Tetramethylsilane (TMS) is a well-known precursor for the production of SiC films by CVD [36] either in low-pressure [37][38][39][40] or plasma-assisted [41,42] processes. Chang et al [43] produced amorphous ultrafine Si x C y N z powders by thermal decomposition of hexamethyldisilazane (HMDS), which could be converted into nanocrystalline material, depending on temperature and atmosphere into Si, β-SiC, α-SiC, or α-Si3N4.…”

Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al

“…For perfect SiC single crystal, ( + ) ∼ 1000 cm 2 /(V ⋅ s) [34]. If -region has a thickness ∼ 2 m, minority carrier lifetime will be ∼0.1 ns from (9).…”

Thermodynamic approach to the synthesis of silicon carbide using tetramethylsilane as the precursor at high temperature

“…It is also possible to prepare SiC by chemical vapor deposition (CVD) using various vaporized or liquid precursors [6][7][8][9][10][11][12][13][14].…”

“…Epitaxial films or powdered SiC can be produced by metal organic chemical vapor deposition (MOCVD) from various liquid precursor such as tetramethylsilane (TMS), diethylsilane (DES) and tripropylsilane (TPS) [6][7][8]. The most common processes used to produce SiC thin films are a high temperature chemical vapor deposition (HTCVD) technique starting from a hydrocarbon and silane, diluted in hydrogen, performed at high temperature (1600-2000 1C) and reduced pressure (100-500 mbar) [9][10][11].…”

“…Hence, TMS has been widely used as a precursor in the deposition of SiC films at relatively low temperatures, in which a SiC(b) phase is formed [7,8]. Moreover, TMS has been used to produce bulk SiC(b) single crystals by means of a continuous feed physical vapor transport (CF-PVT) technique, in which a solid SiC phase is dynamically generated from TMS in a CVD reactor and then sublimed in a PVT chamber [15,16].…”