Sic polycrystalline layers were grown by LPCVD in a hot wall reactor using tetramethylsilane (TMS) diluted in hydrogen as precursor. The morphology and the structure of the films were analyzed in terms of deposition temperature, total pressure in the reactor and TMS flow rate. The layer's have been characterized using various techniques: SEMI X-ray diffraction and TEM (HREM and EELS).
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