Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe

Capper, P.; Maxey, C. D.; Jones, C. L.; Gower, Jacqueline; O’Keefe, E.; Shaw, D.

doi:10.1007/s11664-999-0047-5

Cited by 14 publications

(7 citation statements)

References 51 publications

(56 reference statements)

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“…Of the native defects only V Hg was of significance and was predicted to be a monovalent acceptor. This latter property is in conflict with the earlier evidence of Vydyanath [9] and more recent evidence summarized in [10] that the V Hg is a divalent acceptor, V Hg .…”

Section: Introductioncontrasting

confidence: 65%

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The incorporation and diffusivity of As in Hg_0.8Cd_0.2Te

Shaw

2000

Semicond. Sci. Technol.

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The dependence to be expected by the experimentally observed diffusivity of As in Hg 0.8 Cd 0.2 Te, D(As), on the Hg pressure, P Hg , and on the As concentration has been calculated for various modes of As incorporation described in the literature and for interstitial and vacancy diffusion mechanisms. Comparison with experimental data which shows D(As) to be independent of As concentration (at least up to 5 × 10 18 cm −3 ), to vary as 1/P Hg at moderate pressures and as 1/P 3 Hg at high pressures, confirms that these features can only be accounted for if As substitutes on the cation sub-lattice as As • Hg and on the anion sub-lattice as As Te . Diffusion occurs on the cation sub-lattice due to the mobile As • Hg diffusing by a vacancy mechanism. Significant concentrations of As dimer or tetramer complexes give rise to D(As) depending on the As concentration as well as incorrect variations with P Hg . A further important result is that Hg 0.8 Cd 0.2 Te is electrically intrinsic for these As concentrations down to at least 250 • C.

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Section: Introductioncontrasting

confidence: 65%

“…Equations ( 7) and ( 9) then give (10) in which G = qE/kT and the Einstein relation µkT = D(As • Hg ) has been used. The differential terms in equation (10) can now be removed by using equations (1) and (6)…”

Section: The Chandra Et Al Model [11 12]mentioning

confidence: 99%

The incorporation and diffusivity of As in Hg_0.8Cd_0.2Te

Shaw

2000

Semicond. Sci. Technol.

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“…Low−temperature thermal annealing in Hg vapour, which is used for p−to−n type conversion in MCT, has been reviewed many times (see, e.g., a review by Capper et al [11]). Unfor− tunately, the annealing can only reduce [V Hg ] down to a level corresponding to equilibrium with the vapour at a given tem− perature and cannot cope with residual acceptor impurities involved in the compensation effect.…”

Section: Introductionmentioning

confidence: 99%

Background donor concentration in HgCdTe

Іжнін

Mynbaev

Voitsekhovsky

et al. 2015

Opto-Electronics Review

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“…A significant amount of work has been performed concerning the electrical properties of the materials following the anneal. [2][3][4][5][6][7] Most of these investigations were concentrated on long-wavelength infrared (LWIR) HgCdTe (x = 0.20-0.24), 2,3,5 though some investigations extended these to mid-wavelength infrared (MWIR) HgCdTe (x = 0.25-0.34). 4,6 Very few of these studies were extended to short-wavelength infrared (SWIR) HgCdTe (x > 0.34).…”

Section: Introductionmentioning

confidence: 99%

“…[2][3][4][5][6][7] Most of these investigations were concentrated on long-wavelength infrared (LWIR) HgCdTe (x = 0.20-0.24), 2,3,5 though some investigations extended these to mid-wavelength infrared (MWIR) HgCdTe (x = 0.25-0.34). 4,6 Very few of these studies were extended to short-wavelength infrared (SWIR) HgCdTe (x > 0.34). 4,7,8 These investigations were mostly based on studying the conversion of p-type HgCdTe to n-type HgCdTe by post-growth annealing under saturated-Hg pressure.…”

Section: Introductionmentioning

confidence: 99%