Photoluminescence (PL) of HgCdTe-based hetero-epitaxial nanostructures with 50 to 1100 nm-wide potential wells was studied. The nanostructures were grown by molecular beam epitaxy on GaAs substrates. A strong degree of alloy disorder was found in the material, which led to the broadening of the PL spectra and a considerable Stokes shift that could be traced up to temperature T∼230 K. Annealing of the structures improved the ordering and led to the increase in the PL intensity. A remarkable feature of the PL was an unexpectedly small decrease of its intensity with temperature increasing from 84 to 300 K. This effect can be related to localization of carriers at potential fluctuations and to the specific character of Auger-type processes in HgCdTe-based nanostructures.
The results from the electrical profiling of an n-on-p junction formed by 190-keV arsenic ion implantation in an indium/vacancy-doped Hg 0.78 Cd 0.22 Te film are presented. Mobility spectrum analysis in combination with wet chemical etching has been employed for the profiling. After the implantation, a typical n + -n-р structure was observed and three electron species were detected: (a) low-mobility electrons in the 400-500 nm-thick top radiation-damaged n + -layer, (b) midmobility electrons also originating from radiation damage and spreading down to 700-900 nm, and (c) high-mobility electrons located in the n-region extending beyond 700-900 nm and down to the p-n junction. A comparison of the extracted electron parameters with the arsenic profile obtained with secondary-ion mass spectroscopy as well as with the defect pattern obtained with transmission electron microscopy allowed for the identification of the origin of all three electron species.
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