Background donor concentration in HgCdTe

Abstract

Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating acceptors. In bulk crystals, films grown with liquid phase epitaxy and films fabricated with molecular beam epitaxy (MBE) on Si substrates, BDC of the order of ~10

Photoluminescence in Mercury Cadmium Telluride – a Historical Retrospective. Part II: 2004–2022

“…showed that it was possible to use this technique to determine the concentration of residual donors, an important parameter of the material that could not be measured using the conventional Hall-effect measurements due to electrical compensation [81]. Moreover, by creating a HgI concentration exceeding the equilibrium value by six to seven orders of magnitude, the etching can somehow activate even neutral defects in MCT [29].…”