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2018
DOI: 10.7567/jjap.57.05gd04
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Low-temperature solution-processed zinc oxide field effect transistor by blending zinc hydroxide and zinc oxide nanoparticle in aqueous solutions

Abstract: We present a novel methods of fabricating low-temperature (180 °C), solution-processed zinc oxide (ZnO) transistors using a ZnO precursor that is blended with zinc hydroxide [Zn(OH) 2 ] and zinc oxide hydrate (ZnO "H 2 O) in an ammonium solution. By using the proposed method, we successfully improved the electrical performance of the transistor in terms of the mobility (μ), on/off current ratio (I on /I off ), sub-threshold swing (SS), and operational stability. Our new approach to forming a ZnO film was syste… Show more

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Cited by 6 publications
(2 citation statements)
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References 32 publications
(44 reference statements)
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“…After 30 min of UVO processing, a shoulder peak at 530.3 eV appeared for the first time. The smallest energy level peak at 530.3 eV (denoted as Zn-OH in Figure 3) is assigned to the oxygen atoms in zinc hydroxide (Zn(OH) 2 ) [66,67,68], and the other peaks at 531.6 (Zn-O) and 532.2 eV (V O ) are associated with the oxygen atoms in ZnO with and without oxygen vacancies, respectively [69,70,71,72]. Hence, it can be interpreted that the Zn(OH) 2 in the synthesized ZnO sample was fully transformed into ZnO with some oxygen vacancies during the first 10-min UVO treatment, and afterwards the oxygen vacancies were filled with oxygen atoms (i.e., oxygen uptake occurred).…”
Section: Resultsmentioning
confidence: 99%
“…After 30 min of UVO processing, a shoulder peak at 530.3 eV appeared for the first time. The smallest energy level peak at 530.3 eV (denoted as Zn-OH in Figure 3) is assigned to the oxygen atoms in zinc hydroxide (Zn(OH) 2 ) [66,67,68], and the other peaks at 531.6 (Zn-O) and 532.2 eV (V O ) are associated with the oxygen atoms in ZnO with and without oxygen vacancies, respectively [69,70,71,72]. Hence, it can be interpreted that the Zn(OH) 2 in the synthesized ZnO sample was fully transformed into ZnO with some oxygen vacancies during the first 10-min UVO treatment, and afterwards the oxygen vacancies were filled with oxygen atoms (i.e., oxygen uptake occurred).…”
Section: Resultsmentioning
confidence: 99%
“…biosensing [4], photocatalysis [5], optoelectronics [6], electronics [7], spintronics [8] and photonics [9]. Many of the proposed devices rely on the fact that ZnO can be easily and cost effectively nanostructured, giving rise to one of the richest families of semiconductor nanostructures known [10].…”
Section: Introductionmentioning
confidence: 99%