ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device

Vieira, Douglas Henrique; Nogueira, Gabriel Leonardo; Morais, Rogério Miranda; Fugikawa-Santos, Lucas; Seidel, Keli Fabiana; Alves, Neri

doi:10.1016/j.sna.2022.113989

Cited by 4 publications

(2 citation statements)

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“…In contrast, the saturation mobility found in ZnO transistors with the planar channel may achieve values as high as μ ≈ 1 cm 2 V −1 s −1 . [ 25,75,76 ] One may use the V TFL to determine the density of traps, once the following equation gives the relationship between these quantities:

\begin{equation}{V}_{TFL} = \frac{{q{N}_t{t}^2}}{{2{\epsilon }_r{\epsilon }_0}}\ \end{equation}

…”

Section: Resultsmentioning

confidence: 99%

Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching

Vieira,

Nogueira,

Merces

et al. 2024

Adv Elect Materials

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Proposals for new architectures that shorten the length of the transistor channel without the need for high‐end techniques are the focus of very recent breakthrough research. Although vertical and electrolyte‐gate transistors are previously developed separately, recent advances have introduced electrolytes into vertical transistors, resulting in electrolyte‐gated vertical field‐effect transistors (EGVFETs), which feature lower power consumption and higher capacitance. Here, EGVFETs are employed to study the charge transport mechanism of spray‐pyrolyzed zinc oxide (ZnO) films to develop a new photosensitive switch concept. The EGVFET's diode cell revealed a current‐voltage relationship arising from space‐charge‐limited current (SCLC), whereas its capacitor cell provided the field‐effect role in charge accumulation in the device's source perforations. The findings elucidate how the field effect causes a continuous shift in SCLC regimes, impacting the switching dynamics of the transistor. It is found ultraviolet light may mimic the field effect, i.e., a pioneering demonstration of current switching as a function of irradiance in an EGVFET. The research provides valuable insights into the charge transport characterization of spray‐pyrolyzed ZnO‐based transistors, paving the way for future nano‐ and optoelectronic applications.

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\begin{equation}{V}_{TFL} = \frac{{q{N}_t{t}^2}}{{2{\epsilon }_r{\epsilon }_0}}\ \end{equation}

…”

Section: Resultsmentioning

confidence: 99%

Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching

Vieira,

Nogueira,

Merces

et al. 2024

Adv Elect Materials

Self Cite

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“…These aspects take into account not only the type of electrolyte but also the properties of the semiconductor layer. As examples of active layers in EGTs we can mention graphene [7], carbon nanotubes [8], poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) [9], polythiophenes [10], and metallic phthalocyanines (MPcs) [11] and zinc oxide (ZnO) [12][13][14][15]. ZnO stands out due to its characteristics as an n-type semiconductor with a large bandgap (3.37 eV), high isoelectric point (∼9), low toxicity, biocompatibility, and biodegradability [12,16,17].…”

Section: Introductionmentioning

confidence: 99%

Potential of electrolyte-gated transistors for anionic molecule detection: proof of concept using dye solution

Ozório,

Rubira,

Vieira

et al. 2023

J. Phys. D: Appl. Phys.

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The use of electrolyte-gated transistors (EGTs) as sensors can be an advantageous alternative for the detection of anionic molecules due to their capability to detect various ions in solution. In this study, we explore the potential of EGTs as analytical tools for detecting anionic molecules, utilizing a copper phthalocyanine-3,4′,4″,4″′-tetrasulfonic acid tetrasodium salt (CuTsPc) solution as a proof of concept. The results demonstrate the EGT's capacity in detecting CuTsPc in an aqueous solution, which molecule dissociates into sodium ions (Na+) and CuPc(SO3−)4 ions, leading to high ionic conductivity and the formation of electrical double layers (EDLs). Varying the concentration of the molecule induced alterations in the EDLs, exhibiting good linearity and sensitivity in the transconductance, and a detection limit of 6.0×10-8 mol/L. Transistors employing the CuTsPc solution as electrolyte operated at low voltages and performed better than water-gated transistors (W-GTs). The transconductance (gm) value for EGTs using CuTsPc solution reached 1.93 mS, while for W-GTs it was around 0.10 mS. Thus, the CuTsPc solution not only serves as a target-molecule in sensor measurements, but also demonstrates potential as an electrolyte in EGTs, thereby assuming a dual role within the device. The main advantage of the EGTs as an analytical tool is their use as a multiparameter device that enables the detection of the analytes using different phenomena that occur at the EDLs interface and which, consequently, changes the device's performance.

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