Low temperature MBE-grown In(Ga,Al)As/InP structures for 1.55 &amp;#x03BC;m THz photoconductive antenna applications

Kuenzel, H.; Boettcher, J.; Biermann, K.; Hensel, H.-J.; Roehle, H.; Sartorius, B.

doi:10.1109/iciprm.2008.4703017

Cited by 4 publications

(5 citation statements)

References 2 publications

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“…On the other hand, the fast decay time in the heavily doped case implies that the formation of the Be-As complex and its related defects dominate the recombination process making the carrier lifetime a strong function of the doping level. The further decrease of the carrier lifetime with annealing implies that the As precipitation enhances the ultrafast photoresponse but does not reduce the defect concentration, which is in contrast to what has been reported in previous studies 15,22 or indeed in LT GaAs materials. 8 This data is also consistent with the PL response.…”

Section: E Carrier Dynamicscontrasting

confidence: 87%

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Characterization of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection

Kostakis

Saeedkia

Missous

2012

Journal of Applied Physics

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The structural, optical, and electrical properties of undoped and Be doped lattice matched InGaAs-InAlAs multiple quantum well structures, grown by molecular beam epitaxy (MBE) at low ($250 C) and normal ($450 C) growth temperatures, have been investigated in detail. Double crystal x-ray diffraction studies showed that the thickness of the low temperature (LT) grown quantum well (QW) layers decrease with post growth annealing, while the normal temperature grown QW layers retain their initial thickness. This behaviour is associated with the As precipitation and is the first evidence and report of a direct observation of this phenomenon in LT InGaAs-InAlAs QWs. Room temperature photoluminescence (PL) measurements revealed signs of optical activities in the LT undoped and lower doped structures suggesting that the native defects in LT InGaAs-InAlAs are not sufficient to completely inhibit band to band recombination. Optimal combination of doping, including a modulation doped structure, and post growth annealing temperature results in materials with sub-picoseconds lifetimes (<200 fs) and a resistivity of $10 7 X/sq, which is a high value for this material. The results imply the possibility of fabricating efficient photo-mixers operating at the telecom wavelength of 1.55 lm for THz imaging or other optoelectronic applications. V

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Section: E Carrier Dynamicscontrasting

confidence: 87%

“…The effect of the post growth annealing in the electrical properties is in a good agreement with what has been reported in the past for the same material system. 14,22…”

Section: Electrical Propertiesmentioning

confidence: 99%

Characterization of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection

Kostakis

Saeedkia

Missous

2012

Journal of Applied Physics

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“…Some authors suggest to reduce slightly the gallium content (thus increasing the material band gap) for superior results [13]. Other epitaxy-based approaches were tested recently and photoconductors exhibiting suitable properties for making THz devices have been obtained by i) incorporating ErAs metallic precipitates in Be-doped In 0.53 Ga 0.47 As [14], ii) incorporating iron impurities that act as mid-gap states in In 0.53 Ga 0.47 As [15], or iii) using an especially designed InGaAs/InAlAs multilayer structure for which absorption and photocarrier trapping occur in different layers of the structure [16]. Be-doped plasma-assisted epitaxy has also been used to fabricate ultrafast III-V compounds [20] but such materials have not yet been exploited for optical THz emission.…”

Section: Rationale and Fabrication Of Fe-implanted Ingaaspmentioning

confidence: 99%

“…This is probably due to its capacity for producing extra mid-gap states [22]. However, resistivity levels discussed in the literature in relationship to ultrafast irradiated or Fe-implanted In 0.53 Ga 0.47 As are typically lower than those pertaining to materials fabricated by epitaxial growth only [13][14][15][16]. High resistivity is desirable since Joule heating becomes a problem when operating photoconductive emitters under high DC electric fields.…”

Section: Rationale and Fabrication Of Fe-implanted Ingaaspmentioning

confidence: 99%

“…However, when shifting to long wavelengths, different materials have to be considered in order to replace GaAs-based photoconductors now turned transparent. Interesting results have been reported by many research teams at 1550 nm on using efficient terahertz devices made with InGaAs ternary compounds, which were produced via various fabrication approaches [13][14][15][16][17][18]. These approaches are briefly described in the next section.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices

Fekecs¹,

Bernier²,

Morris³

et al. 2011

Opt. Mater. Express

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A multiple-energy, high fluence, MeV Fe ion implantation process was applied at 83 K to heavily damage a low band gap (0.79 eV) epitaxial InGaAsP layer. Optimal rapid thermal annealing conditions were found and produced a fast photoconductor with high resistivity (up to 2500 Ω cm) and Hall mobility around 400 cm 2 V −1 s −1 . Short photocarrier trapping times (0.3 ps -3 ps) were observed via transient differential reflectivity measurements. Furthermore, photoconductive terahertz devices with coplanar electrodes were fabricated and validated. Under pulsed excitation with a 1550 nm femtosecond fiber laser source, antennas based on Fe-implanted InGaAsP are able to emit broadband radiation exceeding 2 THz. Given such specifications, this new material qualifies as a worthy candidate for an integration into optical terahertz spectrometer designs.

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Portable terahertz scanner for imaging and spectroscopy using InP-related devices

et al. 2015

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Our recent studies in regards of developing portable THz scanner for imaging and spectroscopy systems are presented. In the course, high power tunable continuous wave (CW) THz emitter and high sensitivity THz receiver platforms are presented. Those platforms can be realized with tunable optical beating source, broadband photomixer, arrayed photomixer and Schottky barrier diode, evanescently-coupled photodiodes with high saturation current, and semiconductor optical amplifier (SOA) integrated optical beating source. On the system level, our recent THz thickness measurement systems and the THz line scanner imaging system are presented.

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Low temperature MBE-grown In(Ga,Al)As/InP structures for 1.55 μm THz photoconductive antenna applications

Cited by 4 publications

References 2 publications

Characterization of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection

Characterization of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection

Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices

Portable terahertz scanner for imaging and spectroscopy using InP-related devices

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