Characterization of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 <i>μ</i>m wavelength illumination for terahertz generation and detection

Kostakis, Ioannis; Saeedkia, Daryoosh; Missous, M.

doi:10.1063/1.4719052

Cited by 15 publications

(5 citation statements)

References 22 publications

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“…Such behaviour was similar in both samples. However, sample V2094 exhibited almost one order of magnitude higher resistance values, which is attributed to the higher doping concentration leading to more compensated material [16].…”

Section: Results – Discussionmentioning

confidence: 99%

“…The uniform doping profile proved to increase the resistivity of the material and thus devices fabricated on it are expected to be suitable for detectors while the selectively doping profile increased the mobility of the material and thus devices fabricated on them are expected to be suitable for emitters. The layer sequence of the MQW structures as well as a detailed characterisation of these material systems is described elsewhere [16]. The devices operating at 1 μm excitation wavelength were based on LT‐In 0.3 Ga 0.7 As photoconductors while the devices operating at 800 nm excitation wavelength were based on LT‐GaAs photoconductors.…”

Section: Devices – Measurementsmentioning

confidence: 99%

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Efficient terahertz devices based on III–V semiconductor photoconductors

Kostakis

Saeedkia

Missous

2014

IET Optoelectronics

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A series of planar aperture and dipole antenna structures fabricated on low temperature grown GaAs and InP-based photoconductors have been evaluated as terahertz (THz) emitters and detectors in a time-domain spectroscopy system under pulsed excitation. The combination of large aperture antennas as emitters and short dipole antennas as detectors results in efficient THz devices operating at 800 nm, 1 μm and 1.55 μm excitation wavelengths. The system responses of these materials are among the best ever reported and allow high-quality measurements to be made. Finally, characterisation of a structure able to be biased vertically and its evaluation as THz emitter is reported for the first time. The THz response of this material with a strong THz signal at low-voltage bias makes the development of battery-operated THz devices possible.

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Section: Results – Discussionmentioning

confidence: 99%

Section: Devices – Measurementsmentioning

confidence: 99%

Efficient terahertz devices based on III–V semiconductor photoconductors

Kostakis

Saeedkia

Missous

2014

IET Optoelectronics

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“…On the one hand it was reported that annealing increased the electron lifetime due to the formation of arsenic clusters, similarly to LTG-GaAs. 27,28,35 On the other hand a recent study on annaled Be-doped LTG-InGaAs/InAlAs multilayer structures revealed a decrease of the electron lifetime for annealing temperatures between 350 • C and 600 • C. 34 In this publication we address this inconsistency and show that annealing indeed increases the electron lifetime due to the precipitation of arsenic antisites.…”

Section: Low Temperature Growthmentioning

confidence: 79%

Terahertz detectors from Be-doped low-temperature grown InGaAs/InAlAs: Interplay of annealing and terahertz performance

et al. 2016

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The influence of post-growth annealing on the electrical properties, the transient carrier dynamics and the performance as THz photoconductive receiver of Beryllium (Be) doped InGaAs/InAlAs multilayer heterostructures grown at 130 °C in a molecular beam epitaxy (MBE) system was investigated. We studied samples with nominally Be doping concentrations of 8 ×10 17 cm-3 – 1.2 ×1019 cm3 annealed for 15 min. – 120 min. at temperatures between 500 °C – 600 °C. In contrast to previous publications, the results show consistently that annealing increases the electron lifetime of the material. In analogy to the annealing properties of low-temperature grown (LTG) GaAs we explain our findings by the precipitation of arsenic antisite defects. The knowledge of the influence of annealing on the material properties allowed for the fabrication of broadband THz photoconductive receivers with an electron lifetime below 300 fs and varying electrical properties. We found that the noise of the detected THz pulse trace in time-domain spectroscopy (TDS) was directly determined by the resistance of the photoconductive receiver and the peak-to-peak amplitude of the THz pulse correlated with the electron mobility.

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“…The mentioned characteristics of GaN together with its capabilities of providing high 2-D electron densities and high longitudinal-optical (LO) phonon of ∼90 meV make it one of the most promising semiconductors for the future of generation, detection, mixing, and frequency multiplication of electromagnetic waves in the THz frequency regime. 185 Researchers have proposed and fabricated several innovative GaN-based THz devices, such as GaN-based plasma THz HFETs, 184,[186][187][188] negative differential resistance diode oscillators, [189][190][191] heterodimensional Schottky diodes, 192,193 impact avalanche transit-time diodes, 194,195 planar Gunn diode, 196 antenna-coupled field-effect transistors, [196][197][198][199][200][201] THz power radiators based on the Volterra-Wiener theory of nonlinear systems with frequencies, 202 high electron mobility transistors, [203][204][205] and QCLs. [206][207][208][209][210][211][212][213][214][215][216][217][218][219] GaN-based devices can fundamentally improve the resolution by enabling THz imaging systems with frequencies higher than 5 THz through enhancing the photon intensity.…”

Section: Advances In Terms Of Materialsmentioning

confidence: 99%

Survey of terahertz photonics and biophotonics

et al. 2020

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We review the advances of terahertz (THz) science and technology in biophotonics, including related challenges and solutions. The main impediment to THz spectroscopy and imaging in this field is the high absorption of the THz beam in water. Hence, transmission imaging and spectroscopy of thick wet tissue using THz radiation has generally been quite difficult. However, the absorption of THz waves by water molecules is so strong that increasing the power of the THz source can lead to structural and functional changes in tissues, so solutions must go beyond a larger power output. In terms of resolution, THz imaging is superior to ultrasound but inferior to visible light microscopy. Owing to its unique material analysis capabilities, promising diagnosis applications have been demonstrated through THz imaging and spectroscopy. Unfortunately, many applications are limited by beam penetration depth and resolution. Hence, researchers from a wide variety of scientific and technical fields have been actively improving these features through the development of electronic devices and materials. In addition, groundbreaking optical architecture and materials to reduce beam absorption in the optics of a system and generate focused beams with smaller diameters have been proposed. On the software side, image processing techniques to computationally enhance the resolution and quality of THz imaging have been proposed. Data science and machine learning to automate the diagnosis of defects and diseases through processing THz images and spectroscopy data have been proposed. We have reviewed the applications of THz radiation in biophotonics and research achievements toward advancing these applications. A conclusion with a roadmap toward increasing the footprint of the THz technology in biophotonics is also proposed.

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Characterization of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection

Cited by 15 publications

References 22 publications

Efficient terahertz devices based on III–V semiconductor photoconductors

Efficient terahertz devices based on III–V semiconductor photoconductors

Terahertz detectors from Be-doped low-temperature grown InGaAs/InAlAs: Interplay of annealing and terahertz performance

Survey of terahertz photonics and biophotonics

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