Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices

Fekecs, A.; Bernier, Martin; Morris, Denis; Chicoine, M.; Schiettekatte, F.; Charette, Paul G.; Arès, Richard

doi:10.1364/ome.1.001165

Cited by 25 publications

(27 citation statements)

References 34 publications

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“…[9][10][11][12] One of the most promising solutions is the use of a superlattice of monolayers of ErAs in an InGaAs substrate. Since the ErAs layers act as deep recombination centers inside the superlattice, the resistivity and carrier lifetime of such superlattice structures can be controlled by the number and thickness of ErAs layers.…”

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confidence: 99%

High power telecommunication-compatible photoconductive terahertz emitters based on plasmonic nano-antenna arrays

Yardimci

Lü

Jarrahi

2016

Applied Physics Letters

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We present a high-power and broadband photoconductive terahertz emitter operating at telecommunication optical wavelengths, at which compact and high-performance fiber lasers are commercially available. The presented terahertz emitter utilizes an ErAs:InGaAs substrate to achieve high resistivity and short carrier lifetime characteristics required for robust operation at telecommunication optical wavelengths. It also uses a two-dimensional array of plasmonic nano-antennas to offer significantly higher optical-to-terahertz conversion efficiencies compared to the conventional photoconductive emitters, while maintaining broad operation bandwidths. We experimentally demonstrate pulsed terahertz radiation over 0.1-5 THz frequency range with the power levels as high as 300 lW. This is the highest-reported terahertz radiation power from a photoconductive emitter operating at telecommunication optical wavelengths. Published by AIP Publishing. Photoconductive emitters are widely used for generating sub-picosecond pulses in the time-domain terahertz imaging and spectroscopy systems.1-6 Telecommunication wavelengths (e.g., 1550 nm) are one of the most desired regimes for pumping photoconductive emitters due to the availability of high-performance, low-cost and compact fiber lasers. 7,8 However, the performance of previously demonstrated photoconductive terahertz emitters operating at telecommunication wavelengths has been limited by low resistivity of photo-absorbing semiconductor substrates at these wavelengths (e.g., InGaAs). This is because efficient operation of photoconductive terahertz emitters requires accelerating photo-generated carriers by high bias electric fields, which results in high dark currents and thermal breakdown when using low resistivity substrates.Various different techniques have been proposed to overcome the low resistivity limitation of photo-absorbing substrates at telecommunication wavelengths.9-12 One of the most promising solutions is the use of a superlattice of monolayers of ErAs in an InGaAs substrate. Since the ErAs layers act as deep recombination centers inside the superlattice, the resistivity and carrier lifetime of such superlattice structures can be controlled by the number and thickness of ErAs layers. [13][14][15][16] Although the high resistivity and short carrier lifetime characteristics of ErAs:InGaAs substrates can enable a more reliable device operation at telecommunication wavelengths, the radiation power of previously demonstrated ErAs:InGaAs photoconductive terahertz emitters operating at 1550 nm pump wavelengths has been limited by low quantum efficiency of conventional ultrafast photoconductors.In this work, we present a large-area photoconductive terahertz emitter based on a two-dimensional array of plasmonic nano-antennas fabricated on an ErAs:InGaAs substrate. The use of plasmonic nano-antennas allows absorption and concentration of the majority of incident pump photons in close proximity to the nano-antennas. As a result, most of the photo-generated carriers drift to t...

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mentioning

confidence: 99%

High power telecommunication-compatible photoconductive terahertz emitters based on plasmonic nano-antenna arrays

Yardimci

Lü

Jarrahi

2016

Applied Physics Letters

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“…26 Nevertheless, as shown in this work, the composition of this quaternary material can be engineered, and it is possible to produce high quality layers with absorption at 1550 nm. There have been two previous reports of THz photoconductive emission from InGaAsP under excitation from femtosecond lasers, namely using ion implanted material 27 and also the Fe-doped MOCVD material used in this work. 28 Similar to Fe-doped InGaAs, the Fe forms deep acceptors in the active layer, trapping the excess carriers and thus compensating the n-type nature of InGaAsP, and increasing the resistivity of the material.…”

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confidence: 99%

Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP

Mohandas

Freeman

Rosamond

et al. 2016

Journal of Applied Physics

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Abstract-We demonstrate the generation of continuous wave terahertz (THz) frequency radiation from photomixers fabricated on both Fe-doped InGaAs and Fe-doped InGaAsP, grown by metal-organic chemical vapor deposition. The photomixers were excited using a pair of distributed Bragg reflector (DBR) lasers with emission around 1550 nm, and THz radiation was emitted over a bandwidth of greater than 2.4 THz. Two InGaAs and four InGaAsP wafers with different Fe doping concentrations were investigated, with the InGaAs material found to outperform the InGaAsP in terms of emitted THz power. The dependencies of the emitted power on the photomixer applied bias, incident laser power, and material doping level, were also studied.

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“…More complex structures have also been investigated; an ErAs/InGaAs superlattice structure showed a resistivity of 343 Ω cm [12], while a Be-InGaAs/InAlAs superlattice structure achieved a maximum sheet resistance of 1E6 Ω/sq (200 Ω cm dark resistivity) [13,14]. Fe-implanted InGaAsP has also been investigated, showing a maximum resistivity of 2.5 kΩ cm [15,16].…”

Section: Introductionmentioning

confidence: 99%

Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation

Hatem

Freeman

Cunningham

et al. 2015

J Infrared Milli Terahz Waves

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We demonstrate efficient generation of terahertz (THz) frequency radiation by pulsed excitation, at wavelengths between 800 and 1550 nm, of photoconductive (PC) switches fabricated using Fe-doped InGaAsP wafers, grown by metal organic chemical vapor deposition (MOCVD). Compared to our previous studies of Fe-doped InGaAs wafers, Fe:InGaAsP wafers exhibited five times greater dark resistivity to give a value of 10 kΩ cm, and Fe:InGaAsP PC switches produced five times higher THz power emission. The effect of Fe-doping concentration (between 1E16 and 1.5E17 cm ) on optical light absorption (between 800 and 1600 nm), on resistivity, and on THz emission is also discussed.

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Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices

Cited by 25 publications

References 34 publications

High power telecommunication-compatible photoconductive terahertz emitters based on plasmonic nano-antenna arrays

High power telecommunication-compatible photoconductive terahertz emitters based on plasmonic nano-antenna arrays

Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP

Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation

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