Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation

Hatem, Osama; Freeman, Joshua R.; Cunningham, J. E.; Cannard, P.; Robertson, M. J.; Linfield, Edmund H.; Davies, A. G.; Moodie, D.G.

doi:10.1007/s10762-015-0231-z

Cited by 22 publications

(4 citation statements)

References 33 publications

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“…Due to low-pulse dispersion, limited attenuation and a set gain spectrum when pumped at 980 nm, Er-doped fibre-optic oscillators and amplifiers generate a wavelength at approximately 1.55 µm [135]. Many materials such as InAs [136], InSb [137,138], GaSb [139], InGaAsP [140], GaInAsBi [141] and doped InGaAs [58,142,143] have all been investigated for this purpose. A recent addition to this list is Ge:Au which has demonstrated impressive gapless bandwidths of up to 70 THz.…”

Section: Nm (Telecommunication-wavelength) Pumped Materialsmentioning

confidence: 99%

Photoconductive emitters for pulsed terahertz generation

Bacon

Madéo

Dani

2021

J. Opt.

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Conceived over 30 years ago, photoconductive (PC) emitters have proved essential in the development and spread of terahertz technology. Since then, not only have they been used extensively in a wide range of spectroscopic and imaging applications, they have also undergone significant improvements in performance, leading to their use for broadband or non-linear spectroscopy. In this review article, we provide an overview of the literature, highlighting the key milestones in the progression of the PC emitter. We also investigate the future of PC technology and review the existing challenges.

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Section: Nm (Telecommunication-wavelength) Pumped Materialsmentioning

confidence: 99%

Photoconductive emitters for pulsed terahertz generation

Bacon

Madéo

Dani

2021

J. Opt.

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“…Amongst them, photoconductive antennas stand out for currently available commercial all-fibre THz systems owing to their simplicity, compactness, and ease of direct coupling to fibre optics. Existing research focuses on the development of 1.55 μm-switched switched photoconductive materials with low dark current such as InGaAs 29 , 30 , InGaAs/InAlAs heterostructures 31 , 32 , InGaAsP 30 , 33 , 34 and GaBiAs 35 , 36 .…”

Section: Introductionmentioning

confidence: 99%

Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires

Peng,

Morgan,

Wagner

et al. 2024

Nat Commun

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Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodity. In this work we demonstrate scalable photoconductive THz receivers based on horizontally-grown InAs nanowires (NWs) embedded in a bow-tie antenna that work at room temperature. The NWs provide a short photoconductivity lifetime while conserving high electron mobility. The large surface-to-volume ratio also ensures low dark current and thus low thermal noise, compared to narrow-bandgap bulk devices. By engineering the NW morphology, the NWs exhibit greatly different photoconductivity lifetimes, enabling the receivers to detect THz photons via both direct and integrating sampling modes. The broadband NW receivers are compatible with gating lasers across the entire range of telecom wavelengths (1.2–1.6 μm) and thus are ideal for inexpensive all-optical fibre-based THz time-domain spectroscopy and imaging systems. The devices are deterministically positioned by lithography and thus scalable to the wafer scale, opening the path for a new generation of commercial THz receivers.

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“…These include ion‐implanted photoconductors , inclusion of rare earth semimetals in GaAs or InGaAs , and formation of quantum wells and superlattice structures . Other groups focus on the development of new photoconductive materials such as BiGaAs , GaAsSb , or InGaAsP . Furthermore, the impact of the metallization has been explored .…”

Section: Introductionmentioning

confidence: 99%

High accuracy terahertz time‐domain system for reliable characterization of photoconducting antennas

Abdulmunem

Born

Mikulics

et al. 2016

Micro & Optical Tech Letters

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We report on a terahertz (THz) time‐domain system to characterize photoconductive THz emitters and detectors, that is designed for highest reproducibility. This system is excellently suited for studying the performance of THz sources and detectors in a systematic manner, either by varying the substrate materials or the geometrical parameters of metallic antenna contacts building a photoconductive switch. After confirming the reproducibility and stability of the system with errors of only 1.9% (over 3 h) and 2.6% (over 9 days), we use the system to compare the performance of five low temperature grown (LT) GaAs wafers with growth temperatures between 200°C and 300°C. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:468–472, 2017

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Generation of Terahertz Radiation from Fe-doped InGaAsP Using 800 nm to 1550 nm Pulsed Laser Excitation

Cited by 22 publications

References 33 publications

Photoconductive emitters for pulsed terahertz generation

Photoconductive emitters for pulsed terahertz generation

Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires

High accuracy terahertz time‐domain system for reliable characterization of photoconducting antennas

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