Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

Gencarelli, Federica; Vincent, Benjamin; Souriau, Laurent; Richard, Olivier; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Heyns, Marc

doi:10.1016/j.tsf.2011.10.119

Cited by 92 publications

(91 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…17 The alternative SnCl 4 precursor is used in combination with Ge 2 H 6 as the Ge source. 13,14 In a typical growth experiment, the gas ratio is held constant, and the film compositions are varied by changing the growth temperature 18 4 to deposit Sn at low temperatures despite the relatively high strength of the Sn-Cl bond (0.33 eV). 6,18 A possible mechanism leading to Sn incorporation under these circumstances would involve the following reactions:…”

Section: Synthetic Approachmentioning

confidence: 99%

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Senaratne

Wallace

Gallagher

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge3H8 and SnD4 hydrides, to fabricate Ge1-ySny photodiodes with very high Sn concentrations in the 12%–16% range. A unique aspect of this approach is the compatible reactivity of the compounds at ultra-low temperatures, allowing efficient control and systematic tuning of the alloy composition beyond the direct gap threshold. This crucial property allows the formation of thick supersaturated layers with device-quality material properties. Diodes with composition up to 14% Sn were initially produced on Ge-buffered Si(100) featuring previously optimized n-Ge/i-Ge1-ySny/p-Ge1-zSnz type structures with a single defected interface. The devices exhibited sizable electroluminescence and good rectifying behavior as evidenced by the low dark currents in the I-V measurements. The formation of working diodes with higher Sn content up to 16% Sn was implemented by using more advanced n-Ge1-xSnx/i-Ge1-ySny/p-Ge1-zSnz architectures incorporating Ge1-xSnx intermediate layers (x ∼ 12% Sn) that served to mitigate the lattice mismatch with the Ge platform. This yielded fully coherent diode interfaces devoid of strain relaxation defects. The electrical measurements in this case revealed a sharp increase in reverse-bias dark currents by almost two orders of magnitude, in spite of the comparable crystallinity of the active layers. This observation is attributed to the enhancement of band-to-band tunneling when all the diode layers consist of direct gap materials and thus has implications for the design of light emitting diodes and lasers operating at desirable mid-IR wavelengths. Possible ways to engineer these diode characteristics and improve carrier confinement involve the incorporation of new barrier materials, in particular, ternary Ge1-x-ySixSny alloys. The possibility of achieving type-I structures using binary and ternary alloy combinations is discussed in detail, taking into account the latest experimental and theoretical work on band offsets involving such materials.

show abstract

Section: Synthetic Approachmentioning

confidence: 99%

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Senaratne

Wallace

Gallagher

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…In theory, these materials can be used to achieve a direct energetic transition in a lattice-matched heterostructure grown on a Si substrate [1][2]. Even though the lattice mismatch between Ge and Sn is large, recent progress in growth has been reported, showing the realization of a fully strained Ge 0.92 Sn 0.08 layer on Ge [3][4]. This technological development allows evaluating the emission and absorption properties of these lattice-matched heterostructures.…”

Section: Introductionmentioning

confidence: 99%

GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

Gassenq¹,

Gencarelli²,

Campenhout³

et al. 2012

Opt. Express

Self Cite

182

105

View full text Add to dashboard Cite

A surface-illuminated photoconductive detector based on Ge 0.9 Sn 0.1 quantum wells with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2µm is achieved with a responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as a function of the GeSn/Ge heterostructure parameters. This work demonstrates that GeSn/Ge heterostructures can be used to developed SOI waveguide integrated photodetectors for short-wave infrared applications. 2012 Optical Society of America References and links1. J. Menendez and J. Kouvetakis "Type-I Ge/Ge1−x−ySixSny strained-layer hetero-structures with a direct Ge Bandgap", Applied Physics Letters, 85(7), 1175-1177 (2004). 2. G. Sun, R. A. Soref, H. H. Cheng, "Design of a Si-based lattice-matched room temperature GeSn/GeSiSn multiquantum-well mid-infrared laser diode", Optics Express 18(19), 19957-19965 (2010). 39(3), 1871-1883, (1989). 14. M. Krijn, "Heterojunction band offsets and effective masses in III-V quaternary alloys" Semiconductor Science and Technology, 6(1), 27-31 (1991

show abstract

“…12 However, high quality GeSn layers were only recently achieved in production tools. 10,13,14 Our growth studies were performed in an industrycompatible Reduced Pressure Chemical Vapor Deposition (RP-CVD) AIXTRON TRICENT® reactor with a showerhead which provides a highly uniform gas precursor distribution over 200 mm wafers. [15][16][17] (Si)GeSn layers were grown on Ge virtual substrates (VS) 18 on p-type (< 1x10 15 cm -3 ) 200 mm Si(100) wafers using Si 2 H 6 , Ge 2 H 6 gas (10% diluted in H 2 ) and SnCl 4 .…”

mentioning

confidence: 99%

Tensely strained GeSn alloys as optical gain media

Wirths¹,

Ikonić²,

Tiedemann³

et al. 2013

Applied Physics Letters

View full text Add to dashboard Cite

This letter presents the epitaxial growth and characterization of a heterostructure for an electrically injected laser, based on a strained GeSn active well. The elastic strain within the GeSn well can be tuned from compressive to tensile by high quality large Sn content (Si)GeSn buffers. The optimum combination of tensile strain and Sn alloying soften the requirements upon indirect to direct bandgap transition. We theoretically discuss the strain-doping relation for maximum net gain in the GeSn active layer. Employing tensile strain of 0.5% enables reasonable high optical gain values for Ge 0.94 Sn 0.06 and even without any n-type doping for Ge 0.92 Sn 0.08 .

show abstract

Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

Cited by 92 publications

References 28 publications

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

Tensely strained GeSn alloys as optical gain media

Contact Info

Product

Resources

About