Low temperature epitaxial growth of 3C-SiC on (111) silicon substrates

Hirabayashi, Yasuo; Kobayashi, Ken; Karasawa, Shiro

doi:10.1016/0022-0248(90)90528-s

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2011

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Cited by 7 publications

(7 citation statements)

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“…One-mm-thick 3C-SiC films were epitaxially grown on a Si(1 0 0) substrates at 1200 1C by low-pressure chemical vapor deposition (LPCVD), as described elsewhere [10,11]. The substrate is referred to here as the ''SiC//Si(1 0 0) substrate''.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Epitaxial growth of (100)-oriented β-FeSi2 film on 3CSiC(100) plane

Akiyama

Kadowaki

Hirabayashi

et al. 2011

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

“…The 3C-SiC is a semiconducting material with a band gap of 2.23 eV and a cubic-phase crystal structure with a space group of F4 3m. It has been epitaxially grown on Si(1 0 0) substrates [10,11].…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of (100)-oriented β-FeSi2 film on 3CSiC(100) plane

Akiyama

Kadowaki

Hirabayashi

et al. 2011

Journal of Crystal Growth

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“…3C-SiC (001) was obtained by chemical vapor deposition on Si (001) substrates [4,5]. The layer thickness of 3C-SiC (001) was 300 nm.…”

Section: Methodsmentioning

confidence: 99%

Photoluminescence study of hexagonal InN/InGaN quantum well structures grown on 3C‐SiC (001) substrates by molecular beam epitaxy

Hirano

Inoue

Shikata

et al. 2008

Phys. Status Solidi (c)

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We have studied photoluminescence from hexagonal InN/InGaN multiple quantum well structures grown on 3C‐SiC (001) substrates with an InGaN underlayer by plasma assisted molecular beam epitaxy. We have observed photoluminescence spectra of InN/InGaN MQWs with various well widths. The photoluminescence peak related to quantum wells was clearly observed even at room temperature and found to shift to higher energies with decreasing well width due to the quantum confinement effect. We also discuss the effect of the built‐in electric fields on the PL peak energy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…3C-SiC (0 0 1) epilayers were obtained by chemical vapor deposition (CVD) growth on Si (0 0 1) substrates [3,4]. The thickness of 3C-SiC (0 0 1) epilayers was 300 nm.…”

Section: Methodsmentioning

confidence: 99%