Magnesium oxide (MgO) films were prepared on a Si(001) substrate by the rf sputtering method at low ambient pressure using a metal target. The X-ray diffraction verified the epitaxial growth of MgO( 001) with a cubic-on-cubic arrangement despite the large lattice mismatch between MgO(100) and Si(100), and contractions of the unit cell along both the out-of-plane and in-plane directions. Epitaxial growth is described as a domain epitaxial relation with a domain mismatch consisting of (k × ) lattice units of the Si substrate and (m × n) ones of the MgO film. To visualize the domain mismatch with combinations of k, , m and n, coherent strains were depicted on polar coordinates. The domain mismatch was estimated as a small value, which was further decreased by the contraction of the unit cell in the epitaxial MgO film.

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Interdependence of elastic strain and segregation in metallic multilayers: An x-ray diffraction study of (111) Au/Ni multilayers J.Lattice-charge stripes and spectral weight near the fermi surface AIP Conf. O x ͑Bi-2201͒ multilayer was investigated by x-ray diffraction methods in order to investigate the effect of internal strain on structural modulation. In multilayered structure, the effect of internal strain is more prominent than in an aliovalent substitution, such as a substitution of La 3+ for Sr 2+ . X-ray reciprocal space mapping ͑XRSM͒ was taken on the -2 plane ͑cross-section XRSM͒ in order to estimate the lattice constants along the in-plane and out-of-plane directions, and -2 scan was used to verify the multilayered structure. Another XRSM method, plan-view XRSM, was employed to verify the in-plane symmetry of structural modulation on theplane. The structural modulation was observed on both the cross-section and plan-view XRSM. The lattice constants together with the modulation vector in multilayer were varied by the multilayer periods without any substitution in the original structure.

The hot embossing of glass with a size on the submicron or micron level is a target of interest for the industrial production of products such as microdevices. For fluidic micro chip applications, polymer materials have been used with the advantage of a relatively low cost of fabrication. However, glass is suitable for high-temperature applications such as in microreactors.Although glass is also a good candidate material for optical devices because of its enhanced optical properties, the development of mold materials has not been established for the hot embossing of glass. In this study, we used Ni-W as a mold material for the hot embossing of glass. A plated Ni-W film has a high heat resistance and a linear expansion coefficient, properties that are similar to those of glass materials. Focused ion beam (FIB) machining was employed for the micron and submicron structurings of a Ni-W mold material. Borosilicate glass, D263, was used as glass material. Glass patterns of 0.4 mm width were obtained by hot embossing with the Ni-W mold.

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