Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

Lee, Sanghoon; Jung, Jae Yun; Lee, Sung-soo; Lee, Sung-bo; Hwang, Nong‐Moon

doi:10.1016/j.jcrysgro.2016.08.033

Cited by 10 publications

(2 citation statements)

References 64 publications

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“…We have shown the ability of low-temperature-grown (<500 • C) poly InAs thin films to achieve remarkable electron mobilities when measured at room temperature (~100 cm 2 /V•s), despite appearing non-uniform. The room-temperature Hall electron mobility of 155 cm 2 /V•s achieved for a heterostructure consisting of 25 nm poly GaAs + 25 nm poly InAs grown on glass (Table 1) exceeds the reported Hall mobility values of a number of other low-temperaturegrown thin-film materials, such as polycrystalline silicon [23], Hf-doped In 2 O 3 [24], ITO [25], and ZnO [26,27]. Temperature-dependent Hall effect measurements showed that surface roughness is the dominant factor limiting the electron mobility in the films, which points towards developing a planarization method for poly InAs films.…”

Section: Discussionmentioning

confidence: 55%

Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C

Curran

Gocalinska²,

Pescaglini³

et al. 2021

Crystals

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Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the films are reported, with electron mobilities of ~100 cm2/V·s achieved at room temperature, and values reaching 155 cm2/V·s for a heterostructure including the polycrystalline InAs film. Test structures fabricated with an aluminum oxide (Al2O3) top-gate dielectric show that transistor-type behavior is possible when poly InAs films are implemented as the channel material, with maximum ION/IOFF > 250 achieved at −50 °C and ION/IOFF = 90 at room temperature. Factors limiting the ION/IOFF ratio are investigated and recommendations are made for future implementation of this material.

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Section: Discussionmentioning

confidence: 55%

Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C

Curran

Gocalinska²,

Pescaglini³

et al. 2021

Crystals

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“…Since crystalline silicon nanoparticles in figure 10 are the building block of films, crystalline films can be deposited at low temperature. Therefore, crystalline silicon films could be deposited even on the polymer substrate at 200 °C, which was shown to be possible by Lee et al [127].…”

Section: Silicon Nanoparticles In Cvdmentioning

confidence: 95%

Synthesis of nanostructures using charged nanoparticles spontaneously generated in the gas phase during chemical vapor deposition

Da-Seul¹,

Hwang²

2018

J. Phys. D: Appl. Phys.

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Nonclassical crystallization is the process in which crystals grow by deposition of nanoparticles rather than by the layer-wise deposition of atoms/ions/molecules on a crystal surface. A spontaneous generation of charged nanoparticles (CNPs) in the gas phase has been experimentally confirmed during many chemical vapor deposition (CVD) processes. The fact that crystals grown by CNPs have smooth surfaces without any void indicates that CNPs have a liquid-like or superplastic property. Based on this understanding of nonclassical crystallization in CVD processes, the synthesis of nanoparticles, thin films and nanowires can be approached systematically. Since electrical field, drag effect, size and the number of charges per particle affect the behavior of CNPs, electric bias, gas velocity, the size of the nanoparticles and the amount of charge can be new processing parameters. The size distribution of CNPs depends on the process conditions.The nanoparticles can be attracted or repelled by applying an electric bias to a substrate. If the nanoparticles are made to land on the substrate in a suitable number density, they can be used as quantum dots. In addition, nanopowders, nanowires, and nanostructures can be synthesized by CNPs with or without metallic catalysts on substrates. Herein, we will review recent results of the synthesis of nanostructures such as nanoparticles, thin films, and nanowires in the CVD process. We will also discuss the role of charge in these syntheses.

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Thin Crystalline and Polycrystalline Silicon Solar Cells

Mauk

2018

McEvoy's Handbook of Photovoltaics

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Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

Cited by 10 publications

References 64 publications

Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C

Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C

Synthesis of nanostructures using charged nanoparticles spontaneously generated in the gas phase during chemical vapor deposition

Thin Crystalline and Polycrystalline Silicon Solar Cells

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