Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C

Abstract

Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the films are reported, with electron mobilities of ~100 cm2/V·s achieved at room temperature, and values reaching 155 cm2/V·s for a heterostructure including the polycrystalline InAs film. Test structures fabricated with an aluminum oxide (Al2O3) top-gate dielectric show that transistor-type behavior is possible when poly InAs films are implemented as the channel material, with maximum ION/IOFF > 250 achieved at −50 °C and ION/IOFF = 90 at room temperature. Factors limiting the ION/IOFF ratio are investigated and recommendations are made for future implementation of this material.

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

“…The TF presented in this work has better electrical characteristics compared to those typically grown at low temperatures (<500 °C) on amorphous substrates reported in literature [23]. We attribute this relative superiority to the greater areal coverage, relatively low surface roughness of the as grown thin film compared to other reported InAs thin film structures on unconventional substrates [8] and a higher average grain size of InAs TF grown on hBN surface. Thus, the TF presented in this work serves as an excellent template for subsequent growth of other III-V layers.…”

“…The TF shows an n-type behaviour with a resistivity of 1.621 × 10 −4 ohm cm, a Hall mobility of 399 cm 2 /(Vs) and a carrier density of 9.510 × 10 19 cm −3 . While pure InAs bulk material exhibits very high room temperature carrier mobility (44000 cm 2 /(Vs)), polycrystalline III-V TFs reported in the literature exhibit carrier mobilities in the range of 100-150 cm 2 /(Vs) [8]. As per the Matthiesen rule, major factors affecting carrier mobility in a polycrystalline TF sample are phonon scattering, Coulomb interaction and surface roughness [22].…”

“…Recent years have seen a growing research interest in lowtemperature-grown semiconducting materials for various applications such as sensors integrated above integrated circuits (IC), display technologies and back-end-of-line integration [7,8]. Low-temperature (<500 °C) processing is indeed crucial for these applications as the substrate or the deposited layers involved might not be compatible with hightemperature processes.…”

Study on Mechanism of Glass Molding Process for Fingerprint Lock Glass Plates

“…The modified Newtonian fluid model is used to simulate the high temperature material flow of glass, and load change during the pressing process is accurately predicted. Foreign scholars Anya et al [14] have proved the relationship between structural relaxation and temperature change of glass materials through experiments. Tao et al [15] studied the effect of thermal expansion coefficient and heat capacity on residual stress of BK7 molded glass lens, and forecast their influence on residual stress by using three thermal expansion coefficients and two heat capacity methods.…”

Determination of thickness and refractive index of SiO2 thin films using the cross-entropy global optimization method

“…Another form of application is through thin films, these play an essential role in devices and integrated circuits (Curran et al 2021, Chakravarty et al 2021. They are used in the connections of active regions of a device, in communication between devices, in external access to circuits, to isolate conductive layers, as structural elements of devices, to protect surfaces from the external environment, as a source of dopant and as a barrier to the doping.…”