2018
DOI: 10.1021/acsnano.7b07739
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Low-Temperature Copper Bonding Strategy with Graphene Interlayer

Abstract: The reliability of lead-free Cu bonding technology is often limited by high bonding temperature and perpetual growth of intermetallic compounds between Sn solder and Cu substrate. Here, we report a low-bonding-temperature and highly reliable Cu bonding strategy with the use of graphene as an interlayer. By integrating a nanoscale graphene/Cu composite on the Cu substrate prior to thermocompression bonding, we observe a macroscale phenomenon where reliable Sn-Cu joints can be fabricated at a bonding temperature… Show more

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Cited by 52 publications
(30 citation statements)
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“…In this work, CVD monolayer graphene grown on Cu foil was used because graphene synthesized in this manner is the most widely used source of large-area graphene in state-of-the-art research and industrial development, despite being polycrystalline and having lower mobility values. Details on the process of CVD graphene synthesis are available in our previous work 26 . As can be seen in Fig.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In this work, CVD monolayer graphene grown on Cu foil was used because graphene synthesized in this manner is the most widely used source of large-area graphene in state-of-the-art research and industrial development, despite being polycrystalline and having lower mobility values. Details on the process of CVD graphene synthesis are available in our previous work 26 . As can be seen in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The sample was then rinsed with IPA followed by nitrogen blow dry. We note that all process parameters chosen for the PMMA-supported graphene transfer in this work were adopted from earlier reports 9,10,16,20,26 . A separate experiment was conducted to further verify the advantageous of paraffin support layers over PMMA (Supplementary Note 1).…”
Section: Methodsmentioning
confidence: 99%
“…The growth substrate was subjected to a Ni etchant (Nickel Etchant TFB, Transense) pre‐treatment before loading into a low‐pressure chemical vapor deposition (LPCVD) system. Similar to previous work,35 the growth substrate was then annealed at 1030 °C for 30 min in a hydrogen‐rich environment (10 sccm of H 2 at 320 mTorr). In the next 30 min, the LPCVD system was maintained at 1030 °C and 4 sccm of CH 4 was introduced in addition to 10 sccm of H 2 , for the graphene synthesis.…”
Section: Methodsmentioning
confidence: 99%
“…Consequently, to achieve high-density integration, high performance, and low power consumption, new high-level surface bonding schemes have to be developed. Recently, the process compatibility and reliability of cold bonding between surfaces with patterned arrangements of nanowires, nanoparticles, and nanocones have been improved by studies of the effects of lowering the temperature and pressure for bonding [ 4 , 5 , 6 , 7 , 8 ]. Such nanometal bonding methods exhibit high bonding strength and low electrical resistance at the interface at ambient or low temperatures.…”
Section: Introductionmentioning
confidence: 99%