Fluidic Flow Assisted Deterministic Folding of Van der Waals Materials

Zhao, Huan; Wang, Beibei; Liu, Fanxin; Yan, Xiaodong; Wang, Haozhe; Leong, Wei Sun; Stevens, Mark J.; Vashishta, Priya; Nakano, Aiichiro; Kong, Jing; Kalia, Rajiv K.; Wang, Han

doi:10.1002/adfm.201908691

Cited by 6 publications

(8 citation statements)

References 39 publications

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“…In methodology, in-memory computing can be decomposed into a series of multiply accumulate (MAC) operations, computing the inner product of two vectors. Feng DRAM [164] SRAM [165] Flash [166] Emerging memory RRAM [167] FTJ Memtransistor…”

Section: Neural Networkmentioning

confidence: 99%

Circuit‐Level Memory Technologies and Applications based on 2D Materials

Liu

Yang

et al. 2022

Advanced Materials

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random-access memory (DRAMs), static random-access memory (SRAMs), [1] and flash memory, [2] multiple transistors and capacitors are employed to constitute a single functional cell. These functional cells are typically integrated to form a memory array for advanced functionality, miniaturized footprints, low power consumption, and reduced latency. Traditional silicon-based complementary metal-oxidesemiconductor (CMOS) technology has been widely used to build these memory arrays. However, the performance improvement of CMOS-based memory relies on the advance of nanofabrication technology to scale down the feature size of transistors, which is approaching the physical limit. [3] To overcome this bottleneck, emerging memory technologies are brought up as promising supplements to conventional memory devices. [4] These novel types of memory include resistive random-access memory (RRAM), [5,6] ferroelectric RAM (FeRAM), [7] optoelectronic RRAM (ORRAM), [8,9] phase-change memory (PCM), [10] and spin-transfer torque magnetoresistive RAM (STT-MRAM). [11,12] Furthermore, emerging memory devices allow non-von-Neumann architectures that pave the way toward high-performance in-memory computing technology. [13,14] For example, memristive crossbar arrays composed of 1-transistor-1-resistor (1T1R) unit cells can enable in-memory computing and are the most cost-efficient thanks to their two-terminal structure. [15] Advanced 3D monolithic stacking integration also emerges as a promising approach to Memory technologies and applications implemented fully or partially using emerging 2D materials have attracted increasing interest in the research community in recent years. Their unique characteristics provide new possibilities for highly integrated circuits with superior performances and low power consumption, as well as special functionalities. Here, an overview of progress in 2D-material-based memory technologies and applications on the circuit level is presented. In the material growth and fabrication aspects, the advantages and disadvantages of various methods for producing large-scale 2D memory devices are discussed. Reports on 2D-material-based integrated memory circuits, from conventional dynamic random-access memory, static random-access memory, and flash memory arrays, to emerging memristive crossbar structures, all the way to 3D monolithic stacking architecture, are systematically reviewed. Comparisons between experimental implementations and theoretical estimations for different integration architectures are given in terms of the critical parameters in 2D memory devices. Attempts to use 2D memory arrays for in-memory computing applications, mostly on logic-in-memory and neuromorphic computing, are summarized here. Finally, challenges that impede the large-scale applications of 2D-material-based memory are reviewed, and perspectives on possible approaches toward a more reliable system-level fabrication are also given, hopefully shedding some light on future research.

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Section: Neural Networkmentioning

confidence: 99%

Circuit‐Level Memory Technologies and Applications based on 2D Materials

Liu

Yang

et al. 2022

Advanced Materials

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“…In addition, the folding manipulation also has unlimited possibilities for creating nonplanar vdW nanoarchitectures. [199][200][201][202] An excellent example is the reversible folding of vdWLs using strain mismatch caused by the solvent exchange between differentially photo-cross-linked SU8 films in acetone and water (Figure 10i-k). [202] The addition of water leads to the self-assembly of nanoarchitectures (Figure 10j), and the unfolding process is achieved by simply immersing them in acetone (Figure 10i).…”

Section: Other Nonplanar Vdw Nanoarchitecturesmentioning

confidence: 99%

Emerging Nonplanar van der Waals Nanoarchitectures from 2D Allotropes for Optoelectronics

Ouyang

Zhang

et al. 2022

Adv Funct Materials

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The unique atomic thickness and mechanical flexibility of 2D van der Waals (vdW) materials endow them with spatial designability and constructability. It is easy to break the inherent planar construction through various spatial manipulations, thus creating vdW nanoarchitectures with nonplanar topologies. The basic properties before evolution are retained and tunable by architecture‐related feature sizes, and other newly generated properties are inspiring as they are beyond the reach of 2D allotropes, bringing great competitiveness for their encouraging applications in optoelectronics. Here, these representative nonplanar vdW nanoarchitectures (i.e., nanoscrolls, nanotubes, spiral nanopyramids, spiral nanowires, nanoshells, etc.) are summarized and their structural evolution processes are elucidated. Their fascinating nascent properties based on their distinctive structural features, focusing on generally enhanced light–matter interactions and device physics, are further introduced. Finally, their opportunities and challenges for in‐depth experimental exploration are prospected. It is a brand‐new idea to modify the properties of 2D vdW materials from micro‐ and nanostructural design and evolution, offering a solid platform for twistronics, valleytronics, and integrated nanophotonics.

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“…Recently, a breakthrough was made in deterministic fabrication of arbitrary vertical heterostructures of 2D RP perovskites, 37 which promises an access to an expanding library of 2D perovskite building blocks and enables unprecedented control of their heterostructures. Furthermore, impressive progress has been made to fold vdW materials at a defined position and direction using microfluidic forces; 38 this technique could potentially be used to form 2D perovskite bilayers with precise twist angles. However, despite the synthetical triumphs, it is not clear whether moiré excitons and flat bands can be formed in 2D RP perovskite heterostructures to enable the envisioned quantum and optoelectronic applications.…”

Section: Introductionmentioning

confidence: 99%