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A desktop NMR spectrometer was used to qualitatively analyze samples in drug-related cases in order to enhance the accuracy of the results and identify new drugs. Twelve known drugs and their derivatives were used to establish the parameters, conditions, and procedures for the methods and validate the feasibility and reliability of the methods. First, 1-D and 2-D NMR data for these 12 drugs and their derivatives were obtained in detail using a 600-MHz NMR spectrometer to create a data library. Next, some of these 12 drugs were analyzed using a Picospin 80 MHz desktop NMR spectrometer to set up the analytical procedure and method. With the procedure and method established, real case samples were analyzed and the data were compared to those obtained by a standard method. The results indicate that the desktop NMR spectrometer is a reliable and promising approach that can be used in criminology to quickly identify whether or not samples contain illegal drugs.

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Ferroelectric random-access memories based on conventional perovskite materials are non-volatile but suffer from lack of CMOS compatibility, scalability limitation, and a destructive reading scheme. On the other hand, ferroelectric tunnel junctions based on CMOS compatible hafnium oxide are a promising candidate for future non-volatile memory technology due to their simple structure, scalability, low power consumption, high operation speed, and non-destructive read-out operation. Herein, we report an efficient strategy based on the interface-engineering approach to improve upon the tunneling electroresistance effect and data retention by depositing bilayer oxide heterostructure (Al2O3/Hf0.5Zr0.5O2) using atomic layer deposition (ALD) on Ge substrate which is treated in-situ ALD chamber with H2-plasma before film deposition. Integrating a thin ferroelectric layer i.e. Hf0.5Zr0.5O2 (8.4 nm) with a thin interface layer i.e. Al2O3 (1 nm) allowed us to reduce the operation (read and write) voltage to 1.4 V, and 4.3 V, respectively, while maintaining a good tunneling electroresistance or ON/OFF ratio above 10. Furthermore, an extrapolation to 1000 years at room temperature gives a residual ON/OFF ratio of 4.

Current intravascular imaging modalities face hurdles in the molecular evaluation of progressed plaques. This study aims to construct a novel hybrid imaging system (intravascular ultrasound/intravascular photoacoustic, IVPA/IVUS) via RGDfk peptide-targeted nanoparticles for monitoring angiogenesis in progressed atherosclerotic plaques in a rabbit model. An atherosclerotic rabbit model was induced by abdominal aorta balloon de-endothelialization followed by a high-fat diet. A human serum albumin (HSA)-based nanoprobe modified with RGDfk peptide was constructed by encapsulating indocyanine green (ICG) via electrostatic force (ICG-HSA-RGDfk NPs, IHR-NPs). A hybrid intravascular imaging system that combined IVUS and IVPA was self-assembled for RGDfk visualization within atherosclerotic plaques in the rabbit abdominal aorta. Through IHR-NPs and the hybrid IVUS/IVPA imaging platform, multiple comprehensive pieces of information on progressed plaques, including anatomical information, composition information and molecular information, can be obtained simultaneously, which may improve the precise diagnosis of plaque characteristics and the evaluation of early interventions for atherosclerosis.

Two bacteria capable of efficiently degrading atrazine were isolated from soil, and named ATLJ-5 and ATLJ-11. ATLJ-5 and ATLJ-11 were identified as Bacillus licheniformis and Bacillus megaterium, respectively. The degradation efficiency of atrazine (50 mg/L) by strain ATLJ-5 can reach about 98.6% after 7 days, and strain ATLJ-11 can reach 99.6% under the same conditions. The degradation of atrazine is faster when two strains are used in combination. Adding the proper amount of fresh soil during the degradation of atrazine by these two strains can also increase the degradation efficiency. The strains ATLJ-5 and ATLJ-11 have high tolerance to atrazine, and can tolerate at least 1000 mg/L of atrazine. In addition, the strains ATLJ-5 and ATLJ-11 have been successfully made into a microbial agent that can be used to treat atrazine residues in soil. The degradation efficiency of atrazine (50 mg/kg) could reach 99.0% by this microbial agent after 7 days. These results suggest that the strains ATLJ-5 and ATLJ-11 can be used for the treatment of atrazine pollution.

random-access memory (DRAMs), static random-access memory (SRAMs), [1] and flash memory, [2] multiple transistors and capacitors are employed to constitute a single functional cell. These functional cells are typically integrated to form a memory array for advanced functionality, miniaturized footprints, low power consumption, and reduced latency. Traditional silicon-based complementary metal-oxidesemiconductor (CMOS) technology has been widely used to build these memory arrays. However, the performance improvement of CMOS-based memory relies on the advance of nanofabrication technology to scale down the feature size of transistors, which is approaching the physical limit. [3] To overcome this bottleneck, emerging memory technologies are brought up as promising supplements to conventional memory devices. [4] These novel types of memory include resistive random-access memory (RRAM), [5,6] ferroelectric RAM (FeRAM), [7] optoelectronic RRAM (ORRAM), [8,9] phase-change memory (PCM), [10] and spin-transfer torque magnetoresistive RAM (STT-MRAM). [11,12] Furthermore, emerging memory devices allow non-von-Neumann architectures that pave the way toward high-performance in-memory computing technology. [13,14] For example, memristive crossbar arrays composed of 1-transistor-1-resistor (1T1R) unit cells can enable in-memory computing and are the most cost-efficient thanks to their two-terminal structure. [15] Advanced 3D monolithic stacking integration also emerges as a promising approach to Memory technologies and applications implemented fully or partially using emerging 2D materials have attracted increasing interest in the research community in recent years. Their unique characteristics provide new possibilities for highly integrated circuits with superior performances and low power consumption, as well as special functionalities. Here, an overview of progress in 2D-material-based memory technologies and applications on the circuit level is presented. In the material growth and fabrication aspects, the advantages and disadvantages of various methods for producing large-scale 2D memory devices are discussed. Reports on 2D-material-based integrated memory circuits, from conventional dynamic random-access memory, static random-access memory, and flash memory arrays, to emerging memristive crossbar structures, all the way to 3D monolithic stacking architecture, are systematically reviewed. Comparisons between experimental implementations and theoretical estimations for different integration architectures are given in terms of the critical parameters in 2D memory devices. Attempts to use 2D memory arrays for in-memory computing applications, mostly on logic-in-memory and neuromorphic computing, are summarized here. Finally, challenges that impede the large-scale applications of 2D-material-based memory are reviewed, and perspectives on possible approaches toward a more reliable system-level fabrication are also given, hopefully shedding some light on future research.