Low-resistance submicron CVD W interlevel via plugs on Al-Cu-Si

Joshi, Rajiv V.; Brodsky, S.; Bucelot, T.; Jaso, M. A.; Uttecht, R.

doi:10.1109/vmic.1989.78013

Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference

DOI: 10.1109/vmic.1989.78013

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Low-resistance submicron CVD W interlevel via plugs on Al-Cu-Si

Rajiv V. Joshi

S. Brodsky

T. Bucelot

et al.

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Cited by 2 publications

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“…N+ annealed coil!. I000A, N+ annealed Ti-Si:0.57 eV (350 -500°C) -C49 TiSi2:0.5 eV (>500°C)[1] . soc., voi.…”

mentioning

confidence: 99%

Rapid Thermal Process for Enhancement of Collimated Titanium Nitride Barriers

Kim

Jin

Hong

et al. 1997

J. Electrochem. Soc.

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A rapid thermal processing (RTP) method to improve the barrier properties of collimated titanium nitride (TiN) was studied. The RTP for the collimated TiN shows a significantly improved diffusion barrier property with reduced electrical contact resistance compared to a conventional furnace annealing process. Aluminum planarization was performed on subhalf micron contacts with various TIN barrier processes to examine electrical properties. When RTP is used, collimated TiN of much smaller thickness than the furnace-annealed collimated TIN shows reliable electrical contact properties without junction leakage failure at subhalf micron contacts. When simultaneous in situ RTP for Ti silicidation and stuffing is performed, we obtain greatly improved p contact resistance. This is due to the phase transformation of Ti-Si amorphous layer to crystalline TiSi2 at Si/barrier interface, as observed by cross-sectional transmission electron microscope.

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“…N+ annealed coil!. I000A, N+ annealed Ti-Si:0.57 eV (350 -500°C) -C49 TiSi2:0.5 eV (>500°C)[1] . soc., voi.…”

mentioning

confidence: 99%

Rapid Thermal Process for Enhancement of Collimated Titanium Nitride Barriers

Kim

Jin

Hong

et al. 1997

J. Electrochem. Soc.

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Low dielectric constant materials and methods for interlayer dielectric films in ultralarge-scale integrated circuit multilevel interconnections

Homma

1998

Materials Science and Engineering: R: Reports

105

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Low-resistance submicron CVD W interlevel via plugs on Al-Cu-Si

Cited by 2 publications

References 6 publications

Rapid Thermal Process for Enhancement of Collimated Titanium Nitride Barriers

Rapid Thermal Process for Enhancement of Collimated Titanium Nitride Barriers

Low dielectric constant materials and methods for interlayer dielectric films in ultralarge-scale integrated circuit multilevel interconnections

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