We demonstrated single-shot measurements of spectral interference between a white-light continuum generated in a hollow-fiber and its second harmonic. The interference has information on the carrier-envelope phase of an input pulse to the fiber and the time delay of the blue wing of the continuum. By analyzing the observed spectral interference, we estimated shot-by-shot changes of the carrier-envelope phase. This method is useful for determining the carrier-envelope phase changes of a low-repetition-rate, high-intensity laser.
A selective SiO2 film-formation technology using liquid-phase deposition (LPD) around room temperature for fully planarized multilevel interconneetions is developed. The LPD technique utilizes supersaturated hydrofluosilicie acid (H2SiF6) aqueous solution as a source liquid. The LPD-SiO2 films can be selectively formed on chemical vapor deposition (CVD) SiO2 underlayers in the trenches "between photoresist patterns or tungsten wiring with photoresist as mask. For polysilicon patterns with photoresist masks, the LPD-SiO= films creep along the polysilicon and photoresist sidewalls. The selective deposition mechanism can be explained as siloxane oligomers, which are formed in the supersaturated H2SiF~ aqueous solution, have different chemical reactivity between the photoresist and substrate surface. Global planarization of trenches between tungsten wiring is achieved using the selective LPD-SiO2 deposition technique. A fully planarized double-level tungsten interconnection is realized using both selective LPD-SiO2 film deposition and selective tungsten CVD via filling. Low contact resistance of ca. 0.3 ~I/unit is achieved for via holes 0.8 p~m in diam.
We have investigated xenon ͑Xe͒ flash lamp annealing for the crystallization of amorphous silicon ͑a-Si͒ films for polycrystalline silicon ͑poly-Si͒ thin film transistors on glass substrates. The Xe flash lamp emits white light with a wavelength range of 400-800 nm for 40 s, thereby instantaneously supplying the energy necessary to crystallize a-Si films to poly-Si films. The distance between electrodes in the lamp is 1000 mm, the bore diameter is 10 mm, and the peak voltage is up to 20 kV. The sample structure is a-Si ͑50 nm͒/SiOx ͑100 nm͒ deposited on a glass substrate by plasma-enhanced chemical vapor deposition using SiH 4 gas. An average grain size of 500 nm is obtained without substrate heating during Xe flash lamp annealing when the light energy density is 1.82 J/cm 2 . The grain size is less than 50 nm at 1.55-1.78 J/cm 2 , and a significant grain growth occurs at 1.82 J/cm 2 . The light energy is absorbed by the whole a-Si film, because the Xe flash lamp emits light with a wide wavelength range of 400-800 nm. Therefore, when the light energy exceeds its threshold at which the a-Si film melting point is observed, a-Si films can be partially melted and subsequently crystallized at the top and bottom surfaces, thereby forming large-grain poly-Si.
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