Rapid Thermal Process for Enhancement of Collimated Titanium Nitride Barriers

Abstract

A rapid thermal processing (RTP) method to improve the barrier properties of collimated titanium nitride (TiN) was studied. The RTP for the collimated TiN shows a significantly improved diffusion barrier property with reduced electrical contact resistance compared to a conventional furnace annealing process. Aluminum planarization was performed on subhalf micron contacts with various TIN barrier processes to examine electrical properties. When RTP is used, collimated TiN of much smaller thickness than the furnace-annealed collimated TIN shows reliable electrical contact properties without junction leakage failure at subhalf micron contacts. When simultaneous in situ RTP for Ti silicidation and stuffing is performed, we obtain greatly improved p contact resistance. This is due to the phase transformation of Ti-Si amorphous layer to crystalline TiSi2 at Si/barrier interface, as observed by cross-sectional transmission electron microscope.

Barrier Capabilities of Selective Chemical Vapor Deposited W Films and WSiN / WSi x / W Stacked Layers Against Cu Diffusion

“…Sputter-deposited refractory metals (such as W, Ta, Mo, and Cr) and their nitrides have become more and more attractive in microelectronic applications as diffusion barrier materials because of their high thermal stability, good electrical conductivity, and excellent capability of suppressing reactions between Cu and Si substrate. [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] However, it is difficult to deposit barrier layers with excellent barrier properties in contact holes of submicron dimensions using the sputtering technique because of potential step coverage problems. In this respect, selective CVD of tungsten (selective CVD-W) is one of the most attractive techniques for filling deep submicron contact holes in ultralarge-scale integrated (ULSI) interconnect applications.…”

Thermal stability of N2–H2plasma-treated metal-organic-vapor-deposition TiN in a W/TiN/Ti/Si system

“…First, as illustrated in figure 3(b), the amorphous TiCNO at the top is a good diffusion barrier in itself. Second, the crystalline TiN at the bottom can form an improved barrier by 'oxygen stuffing' [20] which can be accomplished either by stuffing the grain boundaries with oxygen or nitrogen atoms, creating strong chemical bonds or by the passivation process, where the incorporated oxygen atoms originate from the oxygen-rich TiN at the top during the thermal annealing. The superior barrier performance of the untreated amorphous TiCNO effectively prevents the interdiffusion between the species involving the WSi 2 formation; however, oxygen atoms can diffuse out of the barrier and form SiO x by reacting with the excess Si at the barrier/Si interface.…”

Electronic Structure and Magnetic Properties of Timn3n, Timn3 and Mnti3 Compounds Using Tb-Lmto Method

“…Finally, their hardness is among the highest next to diamond. It has contributed to the industrial use of titanium nitrides, as good candidates for applications needing high wear resistance [20,21].On the other hand, titanium nitrides are widely used in semi-conductors technology as dilution barriers [22,23]. Titanium nitrides doped with transition metal atom displays a wide range of interesting phenomenon of converting the semiconducting materials to magnetic and superconducting compounds [24].…”