Low power fundamental VCO design in D-band using 0.13 &amp;#x00B5;m SiGe BiCMOS technology

Ali, Usman; Fischer, G.; Thiede, A.

doi:10.1109/gemic.2015.7107827

Cited by 11 publications

(3 citation statements)

References 7 publications

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“…Multiple studies have been carried out for the implementation of THz LO. There are mainly four technical methods, namely the fundamental wave oscillator scheme [ 17–20 ] , the harmonic oscillator scheme [ 21–23 ] , oscillator arrays, and the scheme of low frequency oscillator or low frequency phase locked loop plus frequency multiplier chain [ 24–27 ] . For the fundamental wave oscillator, due to the influence of the parasitic capacitance in the THz band, the output frequency tuning range of the oscillator is limited.…”

Section: Silicon‐based Thz Lo Signal Sourcementioning

confidence: 99%

Research on Silicon‐Based Terahertz Communication Integrated Circuits

Zhou

CHEN

Tang

et al. 2022

Chinese J of Electronics

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With the increasing number of users and emerging new applications, the demand for mobile data traffic is growing rapidly. The limited spectrum resources of the traditional microwave and millimeter-wave frequency bands can no longer support the future wireless communication systems with higher system capacity and data throughput. The terahertz (THz) frequency bands have abundant spectrum resources, which can provide sufficient bandwidth to expand channel capacity and increase transmission data rate. In addition, with the rapid development of silicon-based semiconductor technology, its characteristic size keeps decreasing, and the radio frequency performance of active devices is gradually approaching the performance of III-V semiconductor technology. The realization of THz communication systems based on low-cost, high-stability, and easy-to-integrate silicon-based process has become a feasible solution. This review summarizes the reported silicon-based THz communication systems, as well as the key sub-circuit chips in these systems, including the local oscillator, power amplifier, low noise amplifier, on-chip antenna and transceiver chip, etc.

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Section: Silicon‐based Thz Lo Signal Sourcementioning

confidence: 99%

Research on Silicon‐Based Terahertz Communication Integrated Circuits

Zhou

CHEN

Tang

et al. 2022

Chinese J of Electronics

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“…A lot of scientific interest has been invested in the D-Band in the last few years due to its relatively low atmospheric attenuation [1] at high frequencies. This is exploited by novel D-Band systems in the unregulated ISM-Band (122)(123) [2], the potential automotiveband (134)(135)(136)(137)(138)(139)(140)(141) [3] and various, recently FCC, Ofcom as well as CEPT/ETSI-approved industrial frequency bands above 100 GHz [4]. Especially radar systems have grown in significance, as they have been used in different applications such as imaging, near-field communications, wireless personal area networks or distance/velocity measurements [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

An Overview of State-of-the-Art D-Band Radar System Components

Stadler

Papurcu

Welling

et al. 2022

Chips

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In this article, a literature study has been conducted including 398 radar circuit elements from 311 recent publications (mostly between 2010 and 2022) that have been reported mainly in the F-, D- and G-Band (80–200 GHz). This study is intended to give a state-of-the-art comparison on the performance of the different technologies—RFCMOS, SiGe/BiCMOS and III–V semiconductor composites—regarding the most crucial circuit parameters of Voltage-Controlled Oscillators (VCO), Power Amplifiers (PA), Phase Shifters (PS), Low-Noise Amplifiers (LNA) and Mixers. The most common topologies of each circuit element as well as the differences between the technolgies will futher be laid out while reasoning their benefits. Since not all devices were derived solely from single device publications, necessary steps to yield as fairly a comparison as possible were taken. Results include the area and power efficiency in RFCMOS, superior noise and power performance in III–V semiconductors and a continuous compromise between efficiency and performance in SiGe. The most rarely published devices, being Mixers and PSs, in the given frequency range have also been identified to give incentive for further developments.

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“…2 shows the schematic of Colpitts oscillator that has been used in this PLL as fundamental VCO. The proposed Colpitts oscillator is based on a differential common collector stage with an additional common base stage to form cascode configuration [6]. The additional common base stage decouples the LC tank from the VCO output, hence omits the need of a dedicated buffer stage.…”

Section: Introductionmentioning

confidence: 99%

An integrated 118.4 to122 GHz low noise phase-locked loop (PLL) in 0.13 µm SiGe BiCMOS technology

Ali

Bober

Thiede

2016

2016 German Microwave Conference (GeMiC)

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Design of a PLL based frequency synthesizer which is able to provide signals over the frequency bands 118.4 122 GHz, 59.2 -61 GHz, and 29.6 30.5 GHz is presented in this paper. A fundamental voltagecontrolled oscillator (VCO) and two high speed divide by two frequency divider stages are used to cover all three frequency ranges. The first divider stage is a digital dynamic divider while second stage is a static frequency divider. The measured PLL phase noise is 95 dBc/Hz at an offset of 100 kHz from 30 GHz output. The circuit is fabricated in IHP 0.13 µm SiGe BiCMOS technology with f t and f max of 300 GHz and 500 GHz, respectively. The whole PLL occupies chip area of 0.7 mm 2 . The total DC power consumption of the PLL is 0.93 Watt.

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Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology

Cited by 11 publications

References 7 publications

Research on Silicon‐Based Terahertz Communication Integrated Circuits

Research on Silicon‐Based Terahertz Communication Integrated Circuits

An Overview of State-of-the-Art D-Band Radar System Components

An integrated 118.4 to122 GHz low noise phase-locked loop (PLL) in 0.13 µm SiGe BiCMOS technology

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