Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

Wei, Jin; Zhang, Meng; Jiang, Huaping; Cheng, Ching-Hsiang; Chen, Kevin J.

doi:10.1109/led.2016.2609599

Cited by 74 publications

(22 citation statements)

References 25 publications

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“…As shown in Figure 4, the transfer, breakdown and firstquadrant conduction characteristics of CoolMOS and proposed MOSFET are very close because the structural parameters of the active region of the two devices are basically the same. Since the source area of CoolMOS is larger, the R on,sp of CoolMOS is slightly smaller than that of the proposed MOSFET (2.01 mΩ⋅cm 2 for CoolMOS, 2.02 mΩ⋅cm 2 for proposed MOSFET). The threshold voltage V th of both devices is 4.3 V, and the breakdown voltage V BR of both devices is about 1425 V while the breakdown currents rise sharply.…”

Section: Figurementioning

confidence: 92%

A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss

Liu

Tang

Song

et al. 2021

IET Power Electronics

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In this paper, a novel silicon carbide (SiC) trench metal oxide semiconductor field effect transistor (MOSFET) with improved reverse recovery charge and switching energy loss is proposed and investigated utilising ISE-TCAD simulations. The proposed structure features an integrated Schottky barrier diode on one side-wall of the trench below the P-base region, and an inserted thicker oxide layer between the polysilicon gate and source metal on one side-wall of the trench. The simulation results show that compared with Infineon's CoolSiC™ Trench MOSFET, the proposed device decreases the gate charge Q g by 29.2%, leading to significantly improved figures of merit (R on,sp × Q g ). The reverse recovery charge Q rr and peak reverse recovery current (I RRM ) are reduced by 64.1% and 66.0%, respectively. Meanwhile, the total switching energy loss decreases 36.7% for the dynamic performance. How to cite this article: Liu S., et al.: A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss.

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Section: Figurementioning

confidence: 92%

A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss

Liu

Tang

Song

et al. 2021

IET Power Electronics

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“…Therefore, the switching performances of the studied SiC JBS diodes are critical. In this paper, the test circuit in Figure 3a is adopted to study the switching properties of the SiC JBS diodes [23,24]. The studied SiC JBS diode is the device under test (DUT).…”

Section: Switching Performancesmentioning

confidence: 99%

Investigation of Electrical Contacts to p-Grid in SiC Power Devices Based on Charge Storage Effect and Dynamic Degradation

Hua

Wei

2020

Electronics

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P-grid is a typical feature in power devices to block high off-state voltage. In power devices, the p-grid is routinely coupled to an external electrode with an Ohmic contact, but Schottky contact to the p-grid is also proposed/adopted for certain purposes. This work investigates the role of contact to p-grid in power devices based on the commonly adopted technology computer-aided design (TCAD) device simulations, with the silicon carbide (SiC) junction barrier Schottky (JBS) diode as a case study. The static characteristics of the JBS diode is independent of the nature of the contact to p-grid, including the forward voltage drop (VF) and the breakdown voltage (BV). However, during the switching process, a Schottky contact would cause storage of negative charges in the p-grid, which leads to an increased VF during switching operation. On the contrary, an Ohmic contact provides an effective discharging path for the stored negative charges in the p-grid, which eliminates the dynamic degradation issues. Therefore, the necessity of an Ohmic contact to p-grid in power devices is clarified.

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“…Likewise, the contact via hole between the source metal and the dummy gate can be formed along with the formation of the source contact hole. To simulate SiC-based power devices, the following models are essential: anisotropic avalanche model based on the Chynoweth law [19] [20] used only for breakdown voltage simulations, incomplete ionization of dopants in SiC material, Shockley-Read-Hall (SRH) recombination with doping dependency, bandgap narrowing [21]- [23]. The parameters of the electron-and hole-impact ionization coefficients of 4H-SiC used in the simulations are given in Table I.…”

Section: Introductionmentioning

confidence: 99%

SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance

Zhou

Gong

Jia

et al. 2020

IEEE J. Electron Devices Soc.

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In this paper, the SiC planar MOSFET with built-in reverse MOS-channel diode (SiC MCD-MOSFET) is investigated utilizing TCAD simulation tools. When the device is working as a freewheeling diode, the operation of the parasitic body diode is suppressed effectively due to the lower threshold voltage of the MCD. Therefore, the bipolar degradation issue can be completely solved. In addition, the SiC MCD-MOSFET is featuring superior dynamic characteristics. The input capacitance (CISS), reverse transfer capacitance (C RSS), gate charge (Q G) and gate-to-drain charge (Q GD) are reduced by a factor of ~2, ~7, ~2 and ~10, respectively, as compared to the conventional SiC MOSFET (SiC C-MOSFET). Combined with the slightly increased on-resistance (R ON), tremendously enhanced figures of merit (R ON ×Q G and R ON ×Q GD are decreased by a factor of 1.8 and 9, respectively) are obtained in the SiC MCD-MOSFET. The outstanding performance and easy-to-implement feature make the SiC MCD-MOSFET more attractive for further power electronic applications. Index Terms SiC planar MOSFETs, bipolar degradation, dynamic performance.

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Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

Cited by 74 publications

References 25 publications

A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss

A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss

Investigation of Electrical Contacts to p-Grid in SiC Power Devices Based on Charge Storage Effect and Dynamic Degradation

SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance

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