Investigation of Electrical Contacts to p-Grid in SiC Power Devices Based on Charge Storage Effect and Dynamic Degradation

Abstract

P-grid is a typical feature in power devices to block high off-state voltage. In power devices, the p-grid is routinely coupled to an external electrode with an Ohmic contact, but Schottky contact to the p-grid is also proposed/adopted for certain purposes. This work investigates the role of contact to p-grid in power devices based on the commonly adopted technology computer-aided design (TCAD) device simulations, with the silicon carbide (SiC) junction barrier Schottky (JBS) diode as a case study. The static characteristics of the JBS diode is independent of the nature of the contact to p-grid, including the forward voltage drop (VF) and the breakdown voltage (BV). However, during the switching process, a Schottky contact would cause storage of negative charges in the p-grid, which leads to an increased VF during switching operation. On the contrary, an Ohmic contact provides an effective discharging path for the stored negative charges in the p-grid, which eliminates the dynamic degradation issues. Therefore, the necessity of an Ohmic contact to p-grid in power devices is clarified.

Mechanical Stress Effects on 4H-Silicon Carbide Power Diodes

“…However, a lower breakdown voltage and larger reverse current are drawbacks. In addition, SBDs require edge termination to enhance the breakdown characteristics of the contact edge and introduce a concentrated electric field, causing a hard breakdown [19]. Therefore, the main design interests of SBDs focus on edge termination techniques.…”