A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss

Abstract

In this paper, a novel silicon carbide (SiC) trench metal oxide semiconductor field effect transistor (MOSFET) with improved reverse recovery charge and switching energy loss is proposed and investigated utilising ISE-TCAD simulations. The proposed structure features an integrated Schottky barrier diode on one side-wall of the trench below the P-base region, and an inserted thicker oxide layer between the polysilicon gate and source metal on one side-wall of the trench. The simulation results show that compared with Infineon's CoolSiC™ Trench MOSFET, the proposed device decreases the gate charge Q g by 29.2%, leading to significantly improved figures of merit (R on,sp × Q g ). The reverse recovery charge Q rr and peak reverse recovery current (I RRM ) are reduced by 64.1% and 66.0%, respectively. Meanwhile, the total switching energy loss decreases 36.7% for the dynamic performance. How to cite this article: Liu S., et al.: A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss.

Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric

“…Silicon carbide (SiC) material, known for its wide bandgap, high critical breakdown electric field strength and high thermal conductivity, replaces silicon as a new generation power semiconductor material [1][2][3]. The 4H-SiC trench MOSFET (TMOS) has gained significant attention as an emerging power semiconductor device with advantages such as high breakdown voltage (BV), high current capacity, and fast switching speed, which made it widely employed in power-integrated circuits [4][5][6][7][8]. However, achieving high BV in SiC devices typically requires a long drift region and low drift region doping concentration (N D ), resulting in a significant increase in specific on-resistance (R on,sp ).…”