Low frequency plasma deposition and characterization of Si1−xGex:H,F films

The influence of H2/Ar ratio on Ge content of the μc-SiGe:H films deposited by PECVD

“…The dark conductivity decreases from 1.19 × 10 −3 −1 cm −1 to 1.39 × 10 −4 −1 cm −1 when Ge content decreases from 0.53 to 0.28. The trend is consistent with other literature [22,23]. What needs to pay attention is that the dark conductivity increases from 1.39 × 10 −4 to 5.01 × 10 −4 −1 cm −1 as the Ge content decreases Fig.…”

Un-Cooled Microbolometers with Amorphous Germanium-Silicon (a-GexSiy:H) Thermo-Sensing Films

“…Amorphous germanium-silicon (a-Ge x Si y :H) films deposited by PECVD have been studied as thermo-sensing film in microbolometers (R. Ambrosio, 2004;A. Kosarev, 2006;M.…”

“…In our work we have studied the electrical and optical properties of amorphous germaniumsilicon (a-Ge x Si y :H) and amorphous germanium-silicon-boron (a-Ge x Si y B z :H) thin films deposited by plasma (PECVD) (R. Ambrosio, 2004;A. Kosarev, 2006;M.…”

Hydrogen Reduction of Germanium Tetrafluoride in RF-Discharge

“…The initial gaseous compounds for silicon are silane SiH 4 and silicon tetrafluoride SiF 4 , while for germanium there are germane GeH 4 , and, less often, germanium tetrafluoride GeF 4 [5,6] though the latter provides for the best photoelectric structure properties [2,7]. The capacitive discharge (110 kHz) PECVD with GeF 4 as the initial substance was also used to grow photosensitive layers of amorphous germanium a-Ge:F for fabrication of uncooled micro-bolometers showing good performance parameters [8,9]. Plasma-enhanced hydrogen reduction of GeF 4 in a RF (13.56 MHz) inductively-coupled discharge has been recently suggested for the production of stable germanium isotopes in form of layers and bulk samples [10].…”