The influence of H2/Ar ratio on Ge content of the μc-SiGe:H films deposited by PECVD

Tang, Zeguo; Wang, Wenbin; Wang, Desheng; Liu, Dequan; Liu, Qiming; He, Deyan

doi:10.1016/j.jallcom.2010.05.128

Cited by 17 publications

(7 citation statements)

References 27 publications

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“…In addition, the mechanism of passivation of germanium vacancies by atomic and molecular hydrogen has been reported [15]. Appropriate hydrogen can increase the crystallization of the Ge films [16][17][18]. Therefore, hydrogen passivates dangling bonds and helps Ge-Ge bonds to be stronger when H 2 flow rate is from 60 to 80 sccm.…”

Section: Resultsmentioning

confidence: 99%

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

Kuo

Hsieh

et al. 2016

International Journal of Photoenergy

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We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at low growth temperature (180°C). The GaAs and Ge epilayers quality was verified by X-ray diffraction (XRD) and spectroscopy ellipsometry (SE). The full width at half maximum (FWHM) of the Ge and GaAs epilayers in XRD is 406 arcsec and 220 arcsec, respectively. In addition, the GaAs/Ge/Si interface is observed by transmission electron microscopy (TEM) to demonstrate the epitaxial growth. The defects at GaAs/Ge interface are localized within a few nanometers. It is clearly showed that the dislocation is well suppressed. The quality of the Ge buffer layer is the key of III–V/Si tandem cell. Therefore, the high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers is suitable to develop the low cost and high efficiency III–V/Si tandem solar cells.

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Section: Resultsmentioning

confidence: 99%

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

Kuo

Hsieh

et al. 2016

International Journal of Photoenergy

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“…The broad and smooth band nature of all the spectra indicates that the films are amorphous. Three broad peaks near 480, 390, and 280 cm −1 are assigned to SiSi, SiGe, and GeGe transverse optical (TO) vibrations, respectively 17–19. With the increase of the plasma power, the intensity of the SiGe and GeGe modes weakens gradually, which corresponds to the decrease of Ge content in the a‐SiGe:H thin films.…”

Section: Resultsmentioning

confidence: 99%

High‐performance a‐SiGe:H thin film prepared by plasma‐enhanced chemical vapor deposition with high plasma power for solar‐cell application

Yan

Zhao

et al. 2012

Physica Status Solidi (a)

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Hydrogenated amorphous silicon germanium (a‐SiGe:H) thin films were prepared by a 13.56‐MHz plasma‐enhanced chemical vapor deposition (PECVD) method. The optical, optoelectronic, and microstructure properties of the a‐SiGe:H thin films prepared with different plasma powers were investigated systematically by transmission, photo/dark conductivity, Raman, and Fourier transform infrared (FTIR) spectroscopy measurements. It was found that when the deposition pressure was high and the hydrogen (H2) dilution ratio ([H2]/([SiH4] + [GeH4])) was low, an appropriate high plasma power could enlarge the optical bandgap (Eg) by reducing the Ge content in the thin film, enhance the film photosensitivity by improving the film microstructure, and increase the film growth rate. As a demonstration, excellent a‐SiGe:H thin film with Eg of 1.5 eV, the photosensitivity of above 104 and a growth rate of 6.6 Å s−1 was successfully fabricated for the solar‐cell application with a plasma power density of 400 mW cm−2, a deposition pressure of 3 Torr, and a H2 dilution ratio equal to 3 at 220 °C. The underlying mechanism was further analyzed.

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“…[1][2][3] An overview of the possible reactions in an Ar=H 2 discharge has been reported. 4) In the discharges, the active species, such as ions and hydrogen atoms, are responsible for surface reactions.…”

Section: Introductionmentioning

confidence: 99%

Effects of gas composition, focus ring and blocking capacitor on capacitively coupled RF Ar/H₂plasmas

Tong

2015

Jpn. J. Appl. Phys.

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The capacitively coupled discharges in Ar/H 2 mixtures operating at a RF frequency of 13.56 MHz and the total gas pressure of 100 Pa are investigated by means of a two-dimensional fluid model, in which a blocking capacitor is serially connected to the power electrode. The gas mixtures of Ar with 0-10% H 2 and the blocking capacitors of 1 and 100 nF are taken into account. The applied voltage is 200 V and the gas temperature is considered to be 300 K. The density profiles of all the plasma species in the discharges are obtained. Results show that the plasma discharge is concentrated over the focus ring, not being in the center of the reactor. A large potential difference and a high capacitive power deposition appear at the surface area between the substrate and focus ring. With the addition of small amount of H 2 to Ar, the electron density markedly decreases. It is found that the reductions of the metastable excited argon density and the metastable pooling ionization rate due to the addition of H 2 are the main reason that causes the electron density decrease. The self DC-bias generated by the blocking capacitor is examined.

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The influence of H2/Ar ratio on Ge content of the μc-SiGe:H films deposited by PECVD

Cited by 17 publications

References 27 publications

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

High‐performance a‐SiGe:H thin film prepared by plasma‐enhanced chemical vapor deposition with high plasma power for solar‐cell application

Effects of gas composition, focus ring and blocking capacitor on capacitively coupled RF Ar/H₂plasmas

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The influence of H2/Ar ratio on Ge content of the μc-SiGe:H films deposited by PECVD

Cited by 17 publications

References 27 publications

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

High‐performance a‐SiGe:H thin film prepared by plasma‐enhanced chemical vapor deposition with high plasma power for solar‐cell application

Effects of gas composition, focus ring and blocking capacitor on capacitively coupled RF Ar/H2plasmas

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Effects of gas composition, focus ring and blocking capacitor on capacitively coupled RF Ar/H₂plasmas