Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors – Physical interpretation of transport phenomena

Nafaa, B.; Cretu, Bogdan; Ismaïl, N.; Touayar, O.; Carin, R.; Simoen, Eddy; Veloso, A.

doi:10.1016/j.sse.2018.08.010

Cited by 6 publications

(2 citation statements)

References 30 publications

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“…Without HPDA, the PSD consists of two Lorentzian spectra as shown in figure 5 The measured data could be modulated by the cut-off frequency (f cut-off ) of the measurement system because the gain of the preamplifier is changed near f cut-off . From this limitation, the PSD follows as [36]:…”

Section: The Effect Of Hpda On Rtn Characteristicsmentioning

confidence: 99%

Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET

et al. 2020

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In this work, we studied the effect of high-pressure deuterium annealing (HPDA) on a p-type omega-gate nanowire field effect transistor by random telegraph noise (RTN) signal analysis. After HPDA under conditions of 400 • C and 10 atm for 30 min, I OFF decreases by 41.2% and I ON increases by up to 5.4%. Also, subthreshold swing (SS) is reduced from 72 mV dec −1 to 70 mV dec −1 . In RTN analysis, multi-level RTN is reduced to single-level RTN due to the passivation of a fast trap site by HPDA. ∆I D /I D is also decreased 1.3 and 1.1 times at |V OV | = 0.2 V and 0.4 V, respectively. From the low-frequency noise analysis, the reduction of trap density is observed by 86% at |V OV | = 0.4 V after HPDA. Through these results, we found that the HPDA reduces traps of gate dielectric and improves the quality of the interface between gate dielectric and NW channel in p-type OGNW FET.

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Section: The Effect Of Hpda On Rtn Characteristicsmentioning

confidence: 99%

Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET

et al. 2020

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“…Recently, monolithic integration between qubits and readout circuitry has been demonstrated at 2K in 22nm FDSOI technology [5], and the electrical performance of several CMOS technologies has shown to be significantly improved with temperature (T) decrease [6]- [8]. On the other hand, in [9] it is indicated that the low frequency noise to signal power increases at cryogenic T, especially in the presence of subband scattering mechanisms [10]. Moreover, in [11] the authors claim that low frequency charge noise is one of the key parameters to improve qubit fidelity in Si spin qubits.…”

Section: Introductionmentioning

confidence: 99%

Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Paz

Cassé

Theodorou

et al. 2020

IEEE Trans. Electron Devices

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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Improved physics-based analysis to discriminate the flicker noise origin at very low temperature and drain voltage polarization

Cretu

Boudier

Simoen

et al. 2020

Solid-State Electronics

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Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors – Physical interpretation of transport phenomena

Cited by 6 publications

References 30 publications

Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET

Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET

Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Improved physics-based analysis to discriminate the flicker noise origin at very low temperature and drain voltage polarization

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