Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET

Yang, Geunsoo; Kim, Dong-Hyun; Yang, Jian; Barraud, S.; Brévard, L.; Ghibaudo, G.; Lee, Jae Woo

doi:10.1088/1361-6528/ab9e90

Cited by 11 publications

(6 citation statements)

References 40 publications

(43 reference statements)

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“…Unlike in all metal/insulator/metal devices previously studied, if the bias is held constant a cyclical filament formation and disruption at random times occurs (see Figure 5b). More importantly, the mean on/off current ratio statistically observed in Figure 5b is >100, which is the highest ever reported in the literature for a random signal of telegraphic characteristics when compared not only to other reports on h‐BN [ 12,37,47,54 ] but also TMOs, [ 11,52,55,67–72 ] ultra‐scaled transistors [ 73–78 ] and nanowires [ 79–87 ] (see Figure 5c). This behavior, which remains stable over time, cannot be strictly called RTN because this term has been always employed in the literature to refer to charge trapping and de‐trapping, while here it is related to ionic movement; hence, we propose to call it random telegraph signal (RTS)‐like current.…”

Section: Resultssupporting

confidence: 50%

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

Pazos

Becker

Villena

et al. 2023

Adv Funct Materials

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Memristor‐based electronic memory have recently started commercialization, although its market size is small (~0.5%). Multiple studies claim their potential for hardware implementation of artificial neural networks, advanced data encryption, and high‐frequency switches for 5G/6G communication. Application aside, the performance and reliability of memristors need to be improved to increase their market size and fit technology standards. Multiple groups propose novel nano‐materials beyond phase‐change, metal‐oxides, and magnetic materials as resistive switching medium (e.g., two‐dimensional, nanowires, perovskites). However, most studies use characterization setups that are blind to critical phenomena in understanding charge transport across the devices. Here an advanced setup with high temporal resolution is used to analyze current noise, dielectric breakdown growth, and ambipolar resistive switching in memristors based on multilayer hexagonal boron nitride (h‐BN), one of the most promising novel nano‐materials for memristive applications. The random telegraph noise in pristine memristors and its evolution as the devices degrade, covering ~7 orders of magnitude in current with consistent observation, is studied. Additionally, an ambipolar switching regime with very low resistance down to 50Ω and its connection with a telegraph behavior with high/low current ratios >100, linked to a thermally‐driven disruption of a metallic nanofilament, is shown.

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Section: Resultssupporting

confidence: 50%

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

Pazos

Becker

Villena

et al. 2023

Adv Funct Materials

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“…The analysis of a single-trap RTS results in amplitude between two levels and average dwell times at the high and the low levels. Recently, for miniaturized devices down to nanometer sizes, complex RTSs with multiple distinct levels of states are frequently encountered, possibly induced from only a few countable traps [ 57 , 68 , 69 , 70 ]. Thus, a tool to assess multi-level RTS signals is required [ 69 , 71 ].…”

Section: Noise Processesmentioning

confidence: 99%

Material-Inherent Noise Sources in Quantum Information Architecture

Yang

Kim

2023

Materials

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NISQ is a representative keyword at present as an acronym for “noisy intermediate-scale quantum”, which identifies the current era of quantum information processing (QIP) technologies. QIP science and technologies aim to accomplish unprecedented performance in computation, communications, simulations, and sensing by exploiting the infinite capacity of parallelism, coherence, and entanglement as governing quantum mechanical principles. For the last several decades, quantum computing has reached to the technology readiness level 5, where components are integrated to build mid-sized commercial products. While this is a celebrated and triumphant achievement, we are still a great distance away from quantum-superior, fault-tolerant architecture. To reach this goal, we need to harness technologies that recognize undesirable factors to lower fidelity and induce errors from various sources of noise with controllable correction capabilities. This review surveys noisy processes arising from materials upon which several quantum architectures have been constructed, and it summarizes leading research activities in searching for origins of noise and noise reduction methods to build advanced, large-scale quantum technologies in the near future.

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“…3) If trapping/detrapping processes at a certain defect dominate the LFN characteristics, trap occupancy switching results in a discrete current fluctuation (two or multilevel RTN). [36][37][38] However, a Gaussian distribution of the current amplitude is observed in the sensor. Figure 3d shows the variation of I D over time in the bias condition where the Lorentzianlike noise is observed.…”

Section: Lfn Characteristics Of the Fet-type Gas Sensor With A Wo 3 S...mentioning

confidence: 99%

In‐Memory‐Computed Low‐Frequency Noise Spectroscopy for Selective Gas Detection Using a Reducible Metal Oxide

et al. 2023

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Concerns about indoor and outdoor air quality, industrial gas leaks, and medical diagnostics are driving the demand for high-performance gas sensors. Owing to their structural variety and large surface area, reducible metal oxides hold great promise for constructing a gas-sensing system. While many earlier reports have successfully obtained a sufficient response to various types of target gases, the selective detection of target gases remains challenging. In this work, a novel method, low-frequency noise (LFN) spectroscopy is presented, to achieve selective detection using a single FET-type gas sensor. The LFN of the sensor is accurately modeled by considering the charge fluctuation in both the sensing material and the FET channel. Exposure to different target gases produces distinct corner frequencies of the power spectral density that can be used to achieve selective detection. In addition, a 3D vertical-NAND flash array is used with the fast Fourier transform method via in-memory-computing, significantly improving the area and power efficiency rate. The proposed system provides a novel and efficient method capable of selectively detecting a target gas using in-memory-computed LFN spectroscopy and thus paving the way for the further development in gas sensing systems.

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Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET

Cited by 11 publications

References 40 publications

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

Material-Inherent Noise Sources in Quantum Information Architecture

In‐Memory‐Computed Low‐Frequency Noise Spectroscopy for Selective Gas Detection Using a Reducible Metal Oxide

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