The aim of this work is a discussion on the figures of merit of identified traps located in the depletion zone (Si film) of advanced MOSFET devices. Two methodologies to estimate the volume trap densities are investigated, one using the relationship between the surface trap density and volume trap density and a second one based on the temperature evolution at fixed frequency of the generation-recombination plateau level associated to the same trap. By comparing the volume trap densities estimated using these two methods, the results are not agreeing with each other, suggesting that these methods can no longer be used with accuracy in multi-gate devices. Moreover, they may lead in certain cases to results physically not correct. Even about of the volume defects, the linear evolution between the plateau and the characteristic frequency of the generation-recombination contributions associated to the same trap give us the surface trap density without any additional assumption.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.