Low-Frequency Noise in Vertical InAs Nanowire FETs

Abstract

Abstract-

Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors

“…The normalized noise spectral density measured on several devices show similar levels and the two best single NW MOSFET devices show S ID /I DS 2 ¼ 5 Â 10 À9 Hz À1 and S VG Á L G Á W G ¼ 60 and 80 lm 2 lV 2 /Hz, respectively, all values given at f ¼ 10 Hz and V DS ¼ 50 mV. These measurements show an almost 100Â reduction to our previous reported data, 9 and could be attributed to the insertion of an inner Al 2 O 3 layer, thus improving the interface properties. 10 The subthreshold characteristics for a dual conduction device consisting of a single NW are shown in Fig.…”

“…14 The value was referred to as a lower bound for one-and two-dimensional InAs systems and this was argued on the basis that other studies reported similar lowest values. Two other studies of InAs NW FETs; one with 40-nm-diameter NWs and L G ¼ 35 nm (HfO 2 dielectric), 9 and one with 27-nm-diameter NWs and L G ¼ 100-750 nm (Al 2 O 3 dielectric), 15 report values of a H ¼ 4 Â 10 À3 and a H $ 10 À3 , respectively. The values for InAs NW channels in the literature are somewhat larger or comparable to the a H that we calculate for the surface channel a H,surface $ 5 Â 10 À4 .…”

Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

“…The fact that the thinner NWs show better off-state performance and lower DIBL is attributed to increased electrostatic control due to its smaller diameter and the thinner EOT. In contrast, a difference in conduction related to confinement effects is only expected for sub 15 nm NWs, as concluded from a simulation study of the band structure as a function of NW diameter scaling [12]. A further interesting point of reference is that reported data for InAs NW FETs with D NW = 40 nm and L G = 35 nm show SS = 130 mV/decade, a value that is significantly lower than the here reported values.…”

Nanometer-scale InGaAs Field-Effect Transistors for THz and CMOS technologies

“…Trigate FETs with fins as narrow as 30 nm and excellent characteristics have been demonstrated [44,47]. Lateral and vertical Gate-All-Around Nanowire FETs have also been demonstrated with impressive characteristics [48][49].…”