Low energy kinetic threshold in the growth of cubic boron nitride films

Kidner, S.; Taylor, C. A.; Clarke, Roy

doi:10.1063/1.111779

Cited by 60 publications

(23 citation statements)

References 12 publications

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“…The FFT for region 2 show a diffraction pattern of both amorphous and crystalline phases. The crystalline phase represents the image formed by c-BN with (111) reflection [12]. This work is still continuing.…”

Section: Preliminary Tem Resultsmentioning

confidence: 99%

Investigations on the characterization of ion implanted hexagonal boron nitride

Aradi¹,

Naidoo²,

Erasmus³

et al. 2013

Nuclear Instruments and Methods in Physics Research Section B:

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The effect of ion implantation on hexagonal boron nitride (h-BN) is studied herein. We use boron as an ion of choice to introduce radiation damage into h-BN, at fluences ranging from 1 x 10 14 -1 x 10 16 ions/cm 2 and implantation energy ranges from 40 to 160 keV. The thermal dependence is also investigated by varying the annealing temperature from room temperature to 400 °C after implantation. Raman spectroscopy showed Raman active defects one of which is possibly related to the formation of cubic boron nitride nanocrystals (nc-BN) within the implanted range. The relationship of these defect induced Raman active peaks was investigated by varying the implantation parameters. The preliminary Transmision Electron Microscopy (TEM) results also are reported briefly.

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Section: Preliminary Tem Resultsmentioning

confidence: 99%

Investigations on the characterization of ion implanted hexagonal boron nitride

Aradi¹,

Naidoo²,

Erasmus³

et al. 2013

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

show abstract

“…If ion-induced atomic displacements are important to cBN formation (see Section 7)> then, as suggested by Kidner et al [78], cBN synthesis should not be possible at energies near or below the displacement energy of atoms in BN (several tens of electronvolts). Several groups have deposited predominantly cBN films at ion energies near or below 100 eV [59,7&l 17,119,121].…”

Section: P B Mirkarimi T't Nl /Mlueri~~ls Science Rrnd Etlgineeriumentioning

confidence: 97%

“…However, there is not yet convincing evidence for cBN synthesis below E = 50 eV. From a study of the ion-energy dependence, Kidner et al [78] proposed an ion-energy threshold of N 100 eV for cBN synthesis. However, more recently the same group [66,121] synthesized cBN at even lower ion energies by using higher ion-to-atom (Jl n) values.…”

Section: P B Mirkarimi T't Nl /Mlueri~~ls Science Rrnd Etlgineeriumentioning

confidence: 99%

“…Using a sputter process with low-energy ions ( -100 eV) and very low deposition rates ( < 0.1 A s-'), Kidner and Clarke [78] observed that films deposited at 950-1050 "C took greater than two months to delaminate whereas films deposited at temperatures 5 850 "C delaminated in less than one week. Taylor et al…”

Section: Electronic Propertiesmentioning

confidence: 99%

“…[66>121] extended the process of Kidner and Clarke [78] by using higher deposition temperatures (1200 "C), longer deposition times (several tens of hours), and very low-energy ( < 100 eV) nitrogen ions. They found that the frequency of the TO IR absorption decreased toward the bulk cBN value with increasing growth temperature, consistent with decreasing levels of compressive stress (see Section 3.1.4).…”

Section: Electronic Propertiesmentioning

confidence: 99%

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Review of advances in cubic boron nitride film synthesis

Mirkarimi¹,

McCarty²,

Medlin³

1997

Materials Science and Engineering: R: Reports

596

349

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Cubic boron nitride (cBN) has a number of highly desirable mechanical, thermal, electrical, and optical properties. Because of this, there has been an extensive worldwide effort to synthesize thin films of cBN. Film synthesis is difficult in that without significant levels of ion bombardment during growth, only sp2-bonded BN forms, not sp3-bonded cBN. Recently there has been considerable progress in improving the deposition techniques and cBN film quality. In addition, progress has been made in understanding how energetic deposition conditions can lead to cBN formation. However, unanswered questions remain and process improvements are still needed. In this paper we critically and comprehensively review recent developments in cBN film synthesis and characterization. First, the structures and stability of the BN phases and characterization techniques are described. Next, the key experimental parameters controlling cBN film formation and synthesis techniques are discussed. Following a review of microstructure, the proposed mechanisms of cBN formation and the observed mechanical and electrical properties of cBN films are analyzed. We conclude by highlighting the current impediments to the practical realization of cBN-film technology. 0 1997 Published by Elsevier Science S.A.

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Plasma‐assisted CVD of cubic boron nitride

Konyashin

Bill

Aldinger

1997

Chemical Vapor Deposition

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Single-phase cubic boron nitride films of high quality might be of great importance as superhard wear-resistant coatings and semiconductive materials. This paper reviews deposition techniques, precursors, deposition parameters and substrates employed in plasma-assisted chemical vapor deposition (PACVD) of cubic boron nitride (c-BN) as well as procedures applied for the characterization of c-BN-containing films. Mechanisms of the formation of sp3-hybridized boron nitride during PACVD by use of either high-energy nitrogen and argon ions or hydrogen plasmas are discussed. All experimental results on PACVD of c-BN are thought to fit either "physical" or "chemical" routes for c-BN low-pressure synthesis, which are based on principles of c-BN physical vapor deposition or diamond CVD.

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Low energy kinetic threshold in the growth of cubic boron nitride films

Cited by 60 publications

References 12 publications

Investigations on the characterization of ion implanted hexagonal boron nitride

Investigations on the characterization of ion implanted hexagonal boron nitride

Review of advances in cubic boron nitride film synthesis

Plasma‐assisted CVD of cubic boron nitride

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