Plasma‐assisted CVD of cubic boron nitride

Abstract

Single-phase cubic boron nitride films of high quality might be of great importance as superhard wear-resistant coatings and semiconductive materials. This paper reviews deposition techniques, precursors, deposition parameters and substrates employed in plasma-assisted chemical vapor deposition (PACVD) of cubic boron nitride (c-BN) as well as procedures applied for the characterization of c-BN-containing films. Mechanisms of the formation of sp3-hybridized boron nitride during PACVD by use of either high-energy nitrogen and argon ions or hydrogen plasmas are discussed. All experimental results on PACVD of c-BN are thought to fit either "physical" or "chemical" routes for c-BN low-pressure synthesis, which are based on principles of c-BN physical vapor deposition or diamond CVD.

Laser‐Assisted Atomic Layer Deposition of Boron Nitride Thin Films

“…[16] NH 3 and BBr 3 are two precursors that have previously been used for ALD and CVD of BN. [6,14] It is well known that photo-dissociation of NH 3 using an ArF excimer laser, which operates at 193 nm, produces NH and NH 2 . [17] Moreover, in the present study, BBr 3 was observed to dissociate when irradiated at this wavelength.…”

On the effect of water and oxygen in chemical vapor deposition of boron nitride

“…For the deposition of the sp 3 -hybridized phases, highly energetic techniques such as RF and magnetron sputtering, ion-plating and ion-beam assisted deposition (IBAD) [4,5] or plasma enhanced chemical vapor deposition (PECVD) techniques such as electron cyclotron resonance PECVD or microwave PECVD [6] are commonly applied. These processes promote a bombardment of the growing film by atoms and/or ions, which is regarded as necessary, at least initially, to nucleate c-BN.…”

Plasma‐Assisted Approaches in Inorganic Nanostructure Fabrication

“…[133][134][135][136] For PECVD processes, Ge nanoparticles are produced through the reaction of GeCl 4 and H 2 . [123,124] The chloride/hydrogen/nitrogen systems have been proven to be effective for a number of nitride preparations, including BN, [137] TiN, [138,139] and FeN. [140] SiF 4 was also used in microcrystalline silicon thin-film deposition, which resulted in a better film quality compared to those deposited using SiH 4 .…”