2017 European Conference on Optical Communication (ECOC) 2017
DOI: 10.1109/ecoc.2017.8346113
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Low Crosstalk Simultaneous 16-channel × 25 Gb/s Operation of High Density Silicon Photonics Optical Transceiver

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Cited by 7 publications
(7 citation statements)
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“…Furthermore, we recently developed other key technologies to enhance the aggregated bandwidth using the silicon photonics technologies. In terms of power efficiencies of the transmitter circuits, 4.99 mW/Gbps was high compared to other reported values which are listed in a previous paper [14]. To reduce the transmitter circuit power and realize higher data rates, we developed a novel low power silicon photonics four level pulse-amplitude modulation PAM 4 modulator [15].…”
Section: The 56 Gbps Pam4 Transmittersmentioning
confidence: 85%
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“…Furthermore, we recently developed other key technologies to enhance the aggregated bandwidth using the silicon photonics technologies. In terms of power efficiencies of the transmitter circuits, 4.99 mW/Gbps was high compared to other reported values which are listed in a previous paper [14]. To reduce the transmitter circuit power and realize higher data rates, we developed a novel low power silicon photonics four level pulse-amplitude modulation PAM 4 modulator [15].…”
Section: The 56 Gbps Pam4 Transmittersmentioning
confidence: 85%
“…To realize high-density integrated transceivers which can deal with higher transmission bandwidths, we proposed a chip-scale on-package-type optical transceiver structure [12]. The use of silicon photonics technologies is promising for realization of the above-mentioned highdensity optical transceiver structure.…”
Section: On-package-type 400g (16 Ch × 25 Gbps) Transceiversmentioning
confidence: 99%
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“…C-band silicon RM-based photonic TXs have been presented so far as compact footprint and low-energy modules for WDM operation with up to 4 × 20 Gb/s [5] and 4 × 25 Gb/s [6] transmission capabilities, reaching even aggregate data rates up to 4 × 40 Gb/s [7] and 8 × 40 Gb/s [8] when employing 4-element and 8-element RM arrays, respectively. At the same time, C-band MZM structures have also been shown in impressive silicon photonic WDM TX prototypes allowing for transmission capabilities of up to 8 × 25 Gb/s [9] and 16 × 25 Gb/s [10], respectively, while C-band GeSi EAMs have also been incorporated in WDM TX configurations with 4 × 28 Gb/s modulation capabilities [11].…”
Section: Introductionmentioning
confidence: 99%