Abstract:We demonstrate a low-crosstalk 2 x 2 thermo-optic switch with silicon wire waveguides. The device is based on a 2 x 2 array of Mach-Zehnder interferometer (MZI) switches. Lowest crosstalk levels of -50 dB and -30 dB are obtained for 'bar' and 'cross' switching states, respectively. An intersection in the switch is important for low-crosstalk operation. The power consumption of one MZI element switch is 40 mW and the total power consumption of the device is at most 160 mW.
“…The high index contrast of Si-on-insulator (SOI) allows for ultra-compact photonic circuits with small footprint. 3,4 Modulators, 5,6 photodetectors, 7,8 filters, 9,10 switches, 11,12 and other passive devices 13,14 based on Si waveguides have been demonstrated. However, this high-index contrast in SOI waveguides leads to a polarization-dependent wavelength shift and phase shift.…”
We report an efficient and low-loss polarization rotator based on mode evolution using horizontal slot waveguide. The device is fabricated using complementary metal–oxide–semiconductor compatible processes, which allows monolithic integration with active drive electronics and other photonic components. A rotator fabricated with 100 μm transition length provides a high extinction ratio >14 dB for both transverse-magnetic (TM)-transverse-electric (TE) and TE-TM rotation. The excess loss of the device is <1 dB for both rotations as etching of the bottom Si waveguide is prevented. The device also exhibits a uniform rotation response over C+L band wavelength range of 1530-1600 nm.
“…The high index contrast of Si-on-insulator (SOI) allows for ultra-compact photonic circuits with small footprint. 3,4 Modulators, 5,6 photodetectors, 7,8 filters, 9,10 switches, 11,12 and other passive devices 13,14 based on Si waveguides have been demonstrated. However, this high-index contrast in SOI waveguides leads to a polarization-dependent wavelength shift and phase shift.…”
We report an efficient and low-loss polarization rotator based on mode evolution using horizontal slot waveguide. The device is fabricated using complementary metal–oxide–semiconductor compatible processes, which allows monolithic integration with active drive electronics and other photonic components. A rotator fabricated with 100 μm transition length provides a high extinction ratio >14 dB for both transverse-magnetic (TM)-transverse-electric (TE) and TE-TM rotation. The excess loss of the device is <1 dB for both rotations as etching of the bottom Si waveguide is prevented. The device also exhibits a uniform rotation response over C+L band wavelength range of 1530-1600 nm.
“…In both the approaches, −40 dB crosstalk and 0.2 dB insertion loss can be achieved. As an approach without the mode expansion, a tilted waveguide crossing [19], a subwavelength structure [20], and a directional coupler [21,22] have been proposed. For the large port count switch, crosstalk and insertion loss are desired to be as low as possible because the switch consists of a cascade of a large number of intersections.…”
This paper reviews recent progress in integrated multiport optical switch, fabricated on silicon-on-insulator wafers. Typical topologies of multiport switch and the element switches are first described. Then, we review pioneering studies of the integrated multiport switches. We also describe feasible improvements, some of which will better fit the switch to a real use in telecommunication and some to enlarge the port count.
“…In the past few years, several silicon photonic switches have been reported [13][14][15][16][17][18]. They have a nearly 50-fold higher integration density than silica-based planar lightwave circuits [19].…”
Large-scale photonic switches are essential devices for energy-and cost-efficient optical communication networks in cloud and data-intensive computing. Silicon photonics is an attractive platform for high-density photonic integrated circuits with low manufacturing costs through the leveraging of existing advanced complementary metal-oxidesemiconductor processes. Many optical components such as lasers, modulators, splitters, and photodetectors have been successfully integrated on silicon; however, the quest for large-scale silicon photonic switches has remained elusive. Previous silicon photonic switches made of cascaded 1 × 2 or 2 × 2 building blocks have a limited port count (≤8 × 8) or excessive optical losses (>15 dB). Here, we present a 64 × 64 digital silicon photonic switch with a low on-chip insertion loss (3.7 dB) and broadband operation (300 nm). The measured switching time is 0.91 μs, and the extinction ratio is larger than 60 dB. The matrix switch with 4096 microelectromechanical-systems-actuated vertical adiabatic couplers has been integrated on a 8.6 mm × 8.6 mm chip. To our knowledge this is the largest monolithic switch, and the largest silicon photonic integrated circuit, reported to date. The passive matrix architecture of our switch is fundamentally more scalable than that of multistage switches.
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