On the substrate carrying a sub-wavelength grating covered with a thin metal layer, a fluorescent dye-labeled cell was observed by fluorescence microscope. The fluorescence intensity was more than 20 times greater than that on an optically flat glass substrate. Such a great fluorescence enhancement from labeled cells bound to the grating substrate was due to the excitation by grating coupled surface plasmon resonance. The application of a grating substrate to two-dimensional detection and fluorescence microscopy appears to offer a promising method of taking highly sensitive fluorescence images.
We report a multi-mode interference-based optical gate switch using a Ge(2)Sb(2)Te(5) thin film with a diameter of only 1 µm. The switching operation was demonstrated by laser pulse irradiation. This switch had a very wide operating wavelength range of 100 nm at around 1575 nm, with an average extinction ratio of 12.6 dB. Repetitive switching over 2,000 irradiation cycles was also successfully demonstrated. In addition, self-holding characteristics were confirmed by observing the dynamic responses, and the rise and fall times were 130 ns and 400 ns, respectively.
A two‐dimensional (2D) plasmonic coupling nanostructure for enhanced fluorescence observation using a microscope is presented. The substrate contained periodically assembled nanohole arrays with a pitch of 400 nm and a depth of 25 nm. In comparison with one‐dimensional (1D) gratings, this new substrate presented an excellent surface plasmon coupling ability to illuminate light from all directions. Under an optical microscope, an enhancement in the fluorescence intensity of up to 100 times compared with a plain glass slide was observed. The ability to markedly increase the fluorescence intensity means this technique has great potential for application in biodiagnostics, imaging, sensing, and photovoltaic cells.
We, for the first time, present the ultrafast optical nonlinear response of a hydrogenated amorphous silicon (a-Si:H) wire waveguide using femtosecond pulses. We show cross-phase and cross-absorption modulations measured using the heterodyne pump-probe method and estimate the optical Kerr coefficient and two-photon absorption coefficient for the amorphous silicon waveguide. The pumping energy of 0.8 eV is slightly lower than that required to achieve two-photon excitation at the band gap of a-Si:H (approximately 1.7 eV). An ultrafast response of less than 100 fs is observed, which indicates that the free-carrier effect is suppressed by the localized states in the band gap.
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