Low-cost Kerfless Wafers with Gradient Dopant Concentration Exceeding 19% Cell Efficiency in PERC Production Line

Jonczyk, R.; Lorenz, Adam; Erşen, Ali; Hofstetter, Jasmin; Hübener, K.; Duncker, Klaus; Scharf, Jessica; Neibergall, Larissa; Petter, K.; Müller, Jörg; Jeong, Daniel

doi:10.1016/j.egypro.2016.07.077

Cited by 4 publications

(1 citation statement)

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“…Tight resistivity control over a wide range of resistivity is one of the unique features of Direct Wafer technology. This feature is in addition to the option of a built‐in doping gradient and local thickness control (3D wafer) that have been presented in earlier publications …”

Section: Methodsmentioning

confidence: 99%

Effective Lifetime Approaching 1 ms in High‐Resistivity p‐Type Kerfless Multi‐Crystalline Wafers

et al. 2019

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Kerfless p‐type wafers of varying resistivity are grown with Direct Wafer® technology with precise control of dosing the boron concentration in the melt. Bulk resistivity values at very low boron concentration corresponding to >100 Ω‐cm are achieved. Select wafers are processed into lifetime samples and effective electron lifetimes of up to 847 μs are measured, corresponding to an estimated bulk lifetime above 1 ms. In contrast to ingot‐based wafers, a very tight resistivity distribution can be achieved during continuous growth using Direct Wafer technology at virtually any desired target resistivity, without variations caused by zone refining. Thus, a Direct Wafer product can be customized for a given solar cell architecture by growing each individual wafers at the optimum bulk resistivity and wafer thickness. Efficiency parity with high‐performance cast multi‐crystalline wafers has already been demonstrated on a passivated emitter and rear cell production line at 20.5% efficiency.

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Section: Methodsmentioning

confidence: 99%