Abstract:Kerfless p‐type wafers of varying resistivity are grown with Direct Wafer® technology with precise control of dosing the boron concentration in the melt. Bulk resistivity values at very low boron concentration corresponding to >100 Ω‐cm are achieved. Select wafers are processed into lifetime samples and effective electron lifetimes of up to 847 μs are measured, corresponding to an estimated bulk lifetime above 1 ms. In contrast to ingot‐based wafers, a very tight resistivity distribution can be achieved during… Show more
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