Long‐lifetime photoconductivity in Cz n‐ and p‐Si

Abstract

Long-lifetime photoconductivity is observed in Czochralski-grown oxygen-rich heattreated n-and p-type silicon crystals. It appears due to a slow electron (in Cz n-Si) and hole (in Cz p-Si) recombination via two kinds of oxygen-induced recombination centres. Dependences of the long-lifetime photoconductivity on the oxygen content, excitation intensity and temperature arc presented. Possible models to explain an appearance of the long-lifetime photoconductivity in Cz n-and p-Si are discussed. The data presented are important for understanding the long-time photoeffects in semiconductors and for elucidating the origin and structure of oxygen-induced recombination centres in silicon. B

Anomalies of phase diagrams and physical properties of antiferrodistortive perovskite oxides

“…More pronounced and intriguing peculiarities of the dielectric susceptibility, magnetization and AFD order parameter can be caused by RM coupling at lower temperatures. illustrates the influence of external magnetic field on AFD antiferromagnets (prototype is ETO) magnetic properties at zero electric field (compare with results of Ref [29]…”

“…Analytical calculations of the influence of the E-field on the EuTiO3 phase diagram in the framework of LGD theory was performed in Ref. [29]. Below we consider the ME coupling characteristic for EuTiO3 as the main mechanism of E-field influence on the phase diagram using…”